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Volumn 78, Issue 7, 2008, Pages

Defect levels of dangling bonds in silicon and germanium through hybrid functionals

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EID: 50049088844     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.075203     Document Type: Article
Times cited : (159)

References (29)
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    • To support this procedure, we carried out full structural relaxations within PBE0 for a 64-atom supercell finding defect levels differing by at most 0.05 eV.
    • To support this procedure, we carried out full structural relaxations within PBE0 for a 64-atom supercell finding defect levels differing by at most 0.05 eV.


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