Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Journal of Applied Physics

Volumn 90, Issue 9, 2001, Pages 4587-4608

  Fischetti, Massimo V ^a   Neumayer, Deborah A ^a   Cartier, Eduard A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035504954     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1405826     Document Type: Article

References (52)

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