Native defects in Al2 O3 and their impact on III-V/Al2 O3 metal-oxide-semiconductor-based devices

Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

  Weber, J R ^a   Janotti, A ^b   Van De Walle, C G ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTISITES; BAND ALIGNMENTS; BORDER TRAPS; CARRIER SCATTERING; DEEP LEVEL; DEFECT LEVELS; ENERGETIC POSITION; FIXED CHARGES; GATE STACKS; HYBRID DENSITY FUNCTIONAL CALCULATIONS; III-V COMPOUND SEMICONDUCTOR; INTERSTITIALS; METAL OXIDE SEMICONDUCTOR; NATIVE DEFECT; PROMISING MATERIALS;

ALUMINUM; DIELECTRIC DEVICES; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTOR DEVICES;

LEAKAGE (FLUID);

EID: 79951815079     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3544310     Document Type: Article

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