Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

Applied Physics Letters

Volumn 83, Issue 16, 2003, Pages 3407-3409

  Kang, A Y ^a   Lenahan, P M ^a   Conley Jr , J F ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON DENSITY MEASUREMENT; ELECTRON TRAPS; PARAMAGNETIC RESONANCE; SPECTROSCOPIC ANALYSIS; THIN FILMS;

PARAMAGNETIC DEFECTS;

HAFNIUM COMPOUNDS;

EID: 0242496382     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1621078     Document Type: Article

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