Formation of an electric dipole at metal-semiconductor interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 20, 2001, Pages

  Tung, Raymond T ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC METHOD; ARTICLE; CHEMICAL BINDING; COMPUTER INTERFACE; DIPOLE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTROCHEMICAL ANALYSIS; MATHEMATICAL COMPUTING; METAL BINDING; POLARIZATION; QUANTITATIVE ASSAY; SEMICONDUCTOR; SOLID; THEORY;

EID: 0035890648     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.205310     Document Type: Article

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