Negative oxygen vacancies in HfO 2 as charge traps in high-k stacks

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Gavartin, J L ^a   Ramo, D Muñoz ^a   Shluger, A L ^a   Bersuker, G ^b   Lee, B H ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPS; GATE STACK DEVICES; OPTICAL EXCITATION; OXYGEN VACANCIES; PERIODIC SUPERCELL; THERMAL IONIZATION ENERGIES;

CHARGED PARTICLES; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRAPS; IONIZATION;

HAFNIUM COMPOUNDS;

EID: 33747855477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2236466     Document Type: Article

References (24)

1. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, A. Hou, G. Groeseneken, H. E. Maes, and U. Schwalke, IEEE Electron. Dev. Lett. 24, 87 (2003).
2. R. J. Carter, E. Cartier, A. Kerber, L. Pantisano, T. Schram, S. De Gendt, and M. Heyns, Appl. Phys. Lett. 83, 533 (2003).
3. G. Bersuker, B. Lee, H. Huff, J. Gavaitin, and A. Shluger, in Defects in Advanced High-k Dielectric Staks, Nato Science Series II, Mathematics, Physics and Chemistry, edited by E. Gusev (Springer, New York, 2006), 220, pp. 227-236
4. J. Robertson, Rep. Prog. Phys. 69, 327 (2006).
5. A. L. Shluger, A. S. Foster, J. L. Gavartin, and P. V. Sushko, in In Nano and Giga Challenges in Microelectronics, edited by J. Greer, A. Korkin, and J. Labanowski (Elsevier, New York, 2003), pp. 151-222.
6. J. Gavartin, A. S. Foster, G. I. Bersuker, and A. L. Shluger, J. Appl. Phys. 97, 053704 (2005).
7. C. G. Van de Walle, J. Appl. Phys. 95, 3851 (2004).
8. C. Shen, M. F. Li, X. P. Wang, H. Y. Yu, Y. P. Feng, A. T. L. Lim, Y. C. Yeo, D. S. H. Chan, and D. L. Kwong, IEEE Electron. Dev. Meeting 2004, IEDM Tech. Digest 733 (2004).
9. K. Xiong and J. Robertson, Microelectron. Eng. 80, 408 (2005).
10. K. Xiong, J. Robertson, M. C. Gibson, and S. G. Clark, Appl. Phys. Lett. 87, 183505 (2005).
11. A. D. Becke, J. Chem. Phys. 98, 1372 (1993).
12. V. Saunders, R. Dovesi, C. Roetti, R. Orlando, C. M. Zicovich-Wilson, N. M. Harrison, K. Doll, B. Civalleri, B. Bush, and P. L. M. D'Arco, CRYSTAL 2003 User's Manual (University of Torino, Torino, 2003).
13. F. Cora, M. Alfredsson, G. Mallia, D. S. Middlemiss, W. C. Mackrodt, R. Dovesi, and R. Orlando, Struct. Bonding (Berlin) 113, 171 (2004).
14. www.crystal.unito.it/Basis_Sets/ptable.html
15. W. J. Stevens, H. Basch, and P. Jasien, Can. J. Chem. 70, 612 (1992).
16. M. Leslie and M. J. Gillan, J. Phys. C 18, 973 (1985).
17. S. Sayan, T. Emge, E. Garfunkel, X. Zliao, L. Wielunski, D. Vanderbilt, J. S. Suehle, S. Suzer, and M. Banaszak-Holl, J. Appl. Phys. 96, 7485 (2004).
18. V. V. Afanas'ev and A. Stesmans, in High-k Dielectrics, edited by M. Moussa (IOP, Bristol, 2004), pp. 217-250.
19. A. S. Foster, F. Lopez Gejo, A. L. Shluger, and R. M. Nieminen, Phys. Rev. B 65, 174117 (2002).
20. H. Takeuchi, D. Ha, and T.-K. King, J. Vac. Sci. Technol. A 22, 1337 (2004).
21. G. Bersuker, J. Sim, C. S. Park, C. Young, S. Nadkarni, R. Choi, and B. H. Lee, IEEE Int. Reliab. Phys. Symp. Proc. 44, 179 (2006).
22. L. Kantorovich, Quantum Theory of Solid State: An Introduction (Kluwer, Dordrecht, 2004), p. 513.
23. G. Bersuker, J. H. Sim, C. D. Young, C. S. Park, R. Choi, P. M. Zeitzoff, G. A. Brown, B. H. Lee, and R. Murto, Microelectron. Reliab. 44, 1509 (2004)
24. G. Ribes, J. Mitard, M. Denais, S. Bruyere, F. Monsieur, C. Patthasarathy, E. Vincent, and G. Ghibaudo, IEEE Trans. Device Mater. Reliab. 5, 5 (2005).