Oxygen vacancies in high dielectric constant oxides La2 O 3, Lu2 O3, and LaLuO3

Applied Physics Letters

Volumn 95, Issue 2, 2009, Pages

  Xiong, Ka ^a,b   Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; CHARGED STATE; ENERGY LEVEL; FIRST-PRINCIPLES CALCULATION; HIGH DIELECTRIC CONSTANTS; POSITIVE CHARGES;

CHARGE TRAPPING; ELECTRON TRAPS; HAFNIUM COMPOUNDS; LANTHANUM; LUTETIUM; OXIDE MINERALS; OXYGEN; PEROVSKITE; VACANCIES;

OXYGEN VACANCIES;

EID: 67650735821     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3176214     Document Type: Article

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