Theoretical evaluation of zirconia and hafnia as gate oxides for Si microelectronics

Physical Review Letters

Volumn 89, Issue 26, 2002, Pages 266101/1-266101/4

  Fiorentini, Vincenzo ^a   Gulleri, Gianluca ^a  

^a UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; HAFNIUM COMPOUNDS; MICROELECTRONIC PROCESSING; MOLECULAR DYNAMICS; NUMERICAL ANALYSIS; PERMITTIVITY; PROBABILITY DENSITY FUNCTION; THERMODYNAMIC STABILITY; ZIRCONIA;

ELECTRON INJECTION BARRIERS; GATE INSULATORS; GATE OXIDES; HAFNIA;

INTERFACES (MATERIALS);

EID: 4243672394     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.266101     Document Type: Article

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