Epitaxial Y-stabilized ZrO2 films on silicon: Dynamic growth process and interface structure

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2541-2543

  Wang, S J ^a   Ong, C K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC GROWTH PROCESS; DYNAMIC PROCESS; INITIAL STAGES; INTERFACE STRUCTURES; SI WAFER; YTTRIA-STABILIZED ZIRCONIA FILMS;

DESORPTION; INTERFACES (MATERIALS); MONOLAYERS; PULSED LASER DEPOSITION; SILICON; SILICON OXIDES; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIA STABILIZED ZIRCONIA; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956006409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467970     Document Type: Article

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