Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1765-1772

  Fissel, A ^a   Osten, H J ^a   Bugiel, E ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; LEAKAGE CURRENTS; NUCLEATION; PRASEODYMIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE LAYERS;

SILICON;

EID: 0141719634     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1589516     Document Type: Conference Paper

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