SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

Atomic mechanism of electric dipole formed at high-K: SiO2 interface

(2) Lin, L a Robertson, J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ATOMIC MECHANISM; ATOMIC MODELS; BOND DIPOLES; BURIED INTERFACE; CAPPING LAYER; DIPOLE POTENTIAL; DOPANT ATOMS; ELECTRIC DIPOLE; ELECTROSTATIC POTENTIALS; FLAT-BAND VOLTAGE SHIFT; GATE OXIDE FILMS; INTERFACIAL DIPOLES; METAL GATE STACK; METAL WORK FUNCTION; OXIDE CAPPING LAYERS; POTENTIAL SHIFT; TI ATOMS; VALENCE BAND OFFSETS;

ALUMINUM; ATOMS; CALCULATIONS; CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRONEGATIVITY; HAFNIUM OXIDES; METALS; NIOBIUM; OXIDE FILMS; OXYGEN VACANCIES;

SILICON COMPOUNDS;

EID: 79959509115 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3583655 Document Type: Article

Times cited : (87)

References (46)

1
- 31044455312
- High dielectric constant gate oxides for metal oxide Si transistors
- DOI 10.1088/0034-4885/69/2/R02, PII S0034488506721856
- J. Robertson, Rep. Prog. Phys. 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
- (2006) Reports on Progress in Physics , vol.69 , Issue.2 , pp. 327-396
- Robertson, J.¹

2
- 66049115381
- 10.1016/j.mee.2009.03.129
- H. Iwai, Microelectron. Eng. 86, 1520 (2009). 10.1016/j.mee.2009.03.129
- (2009) Microelectron. Eng. , vol.86 , pp. 1520
- Iwai, H.¹

3
- 33646875269
- Gate stack technology for nanoscale devices
- DOI 10.1016/S1369-7021(06)71541-3, PII S1369702106715413
- B. H. Lee, J. Oh, H. H. Tseng, R. Jammy, and H. Huff, Materi. Today 9, 32 (2006). 10.1016/S1369-7021(06)71541-3 (Pubitemid 43783459)
- (2006) Materials Today , vol.9 , Issue.6 , pp. 32-40
- Lee, B.H.¹ Oh, J.² Tseng, H.H.³ Jammy, R.⁴ Huff, H.⁵

4
- 33748614600
- Advanced high- dielectric stacks with polySi and metal gates: Recent progress and current challenges
- DOI 10.1147/rd.504.0387
- E. P. Gusev, V. Narayanan, and M. M. Frank, IBM J. Res. Dev. 50, 387 (2006). 10.1147/rd.504.0387 (Pubitemid 44375469)
- (2006) IBM Journal of Research and Development , vol.50 , Issue.4-5 , pp. 387-410
- Gusev, E.P.¹ Narayanan, V.² Frank, M.M.³

5
- 21644440911
- (IEEE, New York)
- J. K. Schaeffer, C. Capasso, L. R. C. Fonseca, S. Samavedam, D. C. Gilmer, Y. Liang, S. Kalpat, B. Adetutu, H. -H. Tseng, Y. Shiho, A. Demkov, R. Hegde, W. J. Taylor, R. Gregory, J. Jiang, E. Luckowski, M. V. Raymond, K. Moore, D. Triyoso, D. Roan, B. E. White Jr Jr, and P. J. Tobin, Tech. Dig.-Int. Electron Devices Meet. (IEEE, New York, 2004) p. 287.
- (2004) Tech. Dig. - Int. Electron Devices Meet. , pp. 287
- Schaeffer, J.K.¹ Capasso, C.² Fonseca, L.R.C.³ Samavedam, S.⁴ Gilmer, D.C.⁵ Liang, Y.⁶ Kalpat, S.⁷ Adetutu, B.⁸ Tseng, H.-H.⁹ Shiho, Y.¹⁰ Demkov, A.¹¹ Hegde, R.¹² Taylor, W.J.¹³ Gregory, R.¹⁴ Jiang, J.¹⁵ Luckowski, E.¹⁶ Raymond, M.V.¹⁷ Moore, K.¹⁸ Triyoso, D.¹⁹ Roan, D.²⁰ White Jr., B.E.²¹ Tobin, P.J.²² more..

6
- 36249014343
- Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes
- DOI 10.1016/j.mee.2007.05.006, PII S0167931707005461, Advanced Gate Stack Technology (ISAGST)
- H. C. Wen, P. Majhi, K. Choi, C. S. Park, H. N. Alshareef, H. R. Harris, H. Luan, H. Miimi, H. B. Park, G. Bersuker, P. S. Lysaght, S. C. Song, B. H. Lee, and R. Jammy, Microelectron. Eng. 85, 2 (2008). 10.1016/j.mee.2007.05.006 (Pubitemid 350123643)
- (2008) Microelectronic Engineering , vol.85 , Issue.1 , pp. 2-8
- Wen, H.-C.¹ Majhi, P.² Choi, K.³ Park, C.S.⁴ Alshareef, H.N.⁵ Rusty Harris, H.⁶ Luan, H.⁷ Niimi, H.⁸ Park, H.-B.⁹ Bersuker, G.¹⁰ Lysaght, P.S.¹¹ Kwong, D.-L.¹² Song, S.C.¹³ Lee, B.H.¹⁴ Jammy, R.¹⁵

7
- 59949098763
- 10.1116/1.3072517
- J. Robertson, J. Vac. Sci. Technol. B 27, 277 (2009). 10.1116/1.3072517
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 277
- Robertson, J.¹

8
- 34547917220
- Modified oxygen vacancy induced fermi level pinning model extendable to P-metal pinning
- DOI 10.1143/JJAP.45.L1289
- Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, and K. Nakamura, Jpn. J. Appl. Phys. 45, L1289 (2006). 10.1143/JJAP.45.L1289 (Pubitemid 47252525)
- (2006) Japanese Journal of Applied Physics, Part 2: Letters , vol.45 , Issue.46-50
- Akasaka, Y.¹ Nakamura, G.² Shiraishi, K.³ Umezawa, N.⁴ Yamabe, K.⁵ Ogawa, O.⁶ Lee, M.⁷ Amiaka, T.⁸ Kasuya, T.⁹ Watanabe, H.¹⁰ Chikyow, T.¹¹ Ootsuka, F.¹² Nara, Y.¹³ Nakamura, K.¹⁴

9
- 34848861772
- Fermi level pinning by defects in Hf O2 -metal gate stacks
- DOI 10.1063/1.2790479
- J. Robertson, O. Sharia, and A. A. Demkov, Appl. Phys. Lett. 91, 132912 (2007). 10.1063/1.2790479 (Pubitemid 47502599)
- (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 132912
- Robertson, J.¹ Sharia, O.² Demkov, A.A.³

10
- 36448954531
- IEEE, New York)
- V. Narayanan, V. K. Paruchuri, N. A. Bojarczuk, B. P. Linder, B. Doris, Y. H. Kim, S. Zafar, J. Stathis, M. Copel, E. Cartier, A. Callegari, S. Guha, G. Shahidi, T. C. Chen, Tech. Digest. VLSI Symp. (IEEE, New York, 2006), p. 178.
- (2006) , pp. 178
- Narayanan, V.¹ Paruchuri, V.K.² Bojarczuk, N.A.³ Linder, B.P.⁴ Doris, B.⁵ Kim, Y.H.⁶ Zafar, S.⁷ Stathis, J.⁸ Copel, M.⁹ Cartier, E.¹⁰ Callegari, A.¹¹ Guha, S.¹² Shahidi, G.¹³ Chen, T.C.¹⁴ Symp, V.¹⁵

11
- 33847641358
- 2/TiN field effect transistors by dielectric cap layers
- DOI 10.1063/1.2709642
- S. Guha, V. K. Paruchuri, M. Copel, V. Narayanan, Y. Y. Wang, P. E. Batson, N. A. Bojarczuk, B. Linder, and B. Doris, Appl. Phys. Lett. 90, 092902 (2007). 10.1063/1.2709642 (Pubitemid 46355732)
- (2007) Applied Physics Letters , vol.90 , Issue.9 , pp. 092902
- Guha, S.¹ Paruchuri, V.K.² Copel, M.³ Narayanan, V.⁴ Wang, Y.Y.⁵ Batson, P.E.⁶ Bojarczuk, N.A.⁷ Linder, B.⁸ Doris, B.⁹

12
- 33845419668
- Work function engineering using lanthanum oxide interfacial layers
- DOI 10.1063/1.2396918
- H. N. Alshareef, M. Quevedo-Lopez, H. C. Wen, R. Harris, P. Kirsch, P. Majhi, B. H. Lee, R. Jammy, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, Appl. Phys. Lett. 89, 232103 (2006). 10.1063/1.2396918 (Pubitemid 44907244)
- (2006) Applied Physics Letters , vol.89 , Issue.23 , pp. 232103
- Alshareef, H.N.¹ Quevedo-Lopez, M.² Wen, H.C.³ Harris, R.⁴ Kirsch, P.⁵ Majhi, P.⁶ Lee, B.H.⁷ Jammy, R.⁸ Lichtenwalner, D.J.⁹ Jur, J.S.¹⁰ Kingon, A.I.¹¹

13
- 33645154999
- 10.1063/1.2186517
- H. N. Alshareef, H. F. Luan, K. Choi, H. R. Harris, H. C. Wen, M. A. Quevedo-Lopez, P. Majhi, and B. H. Lee, Appl. Phys. Lett. 88, 112114 (2006). 10.1063/1.2186517
- (2006) Appl. Phys. Lett. , vol.88 , pp. 112114
- Alshareef, H.N.¹ Luan, H.F.² Choi, K.³ Harris, H.R.⁴ Wen, H.C.⁵ Quevedo-Lopez, M.A.⁶ Majhi, P.⁷ Lee, B.H.⁸

14
- 32944474528
- ymetal gates
- DOI 10.1063/1.2174836
- H. N. AlShareef, K. Choi, H. C. Wen, H. Luan, H. Harris, Y. Senzaki, P. Majhi, B. H. Lee, and R. Jammy, Appl. Phys. Lett. 88, 072108 (2006). 10.1063/1.2174836 (Pubitemid 43261820)
- (2006) Applied Physics Letters , vol.88 , Issue.7 , pp. 072108
- Alshareef, H.N.¹ Choi, K.² Wen, H.C.³ Luan, H.⁴ Harris, H.⁵ Senzaki, Y.⁶ Majhi, P.⁷ Lee, B.H.⁸ Jammy, R.⁹ Aguirre-Tostado, S.¹⁰ Gnade, B.E.¹¹ Wallace, R.M.¹²

15
- 22944435193
- 3 capping layer on pMOS
- DOI 10.1109/LED.2005.851093
- H. J. Li and M. I. Gardner, IEEE Electron Device Lett. 26, 441 (2005). 10.1109/LED.2005.851093 (Pubitemid 41046717)
- (2005) IEEE Electron Device Letters , vol.26 , Issue.7 , pp. 441-444
- Li, H.-J.¹ Gardner, M.I.²

16
- 0035947882
- 10.1063/1.1381566
- L. A. Ragnarsson, S. Guha, M. Copel, E. Cartier, N. A. Bojarczuk, and M. Poppeller, Appl. Phys. Lett. 78, 4169 (2001). 10.1063/1.1381566
- (2001) Appl. Phys. Lett. , vol.78 , pp. 4169
- Ragnarsson, L.A.¹ Guha, S.² Copel, M.³ Cartier, E.⁴ Bojarczuk, N.A.⁵ Poppeller, M.⁶

17
- 2942689784
- 10.1109/TED.2004.829513
- C. C. Hobbs, L. R. C. Fonseca, A. Knizhnik, V. Dhandapani, S. B. Samavedam, W. J. Taylor, J. M. Grant, L. Dip, D. H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, H. H. Tseng, B. E. White, and P. J. Tobin, IEEE Trans. Electron Devices 51, 971 (2004). 10.1109/TED.2004.829513
- (2004) IEEE Trans. Electron Devices , vol.51 , pp. 971
- Hobbs, C.C.¹ Fonseca, L.R.C.² Knizhnik, A.³ Dhandapani, V.⁴ Samavedam, S.B.⁵ Taylor, W.J.⁶ Grant, J.M.⁷ Dip, L.⁸ Triyoso, D.H.⁹ Hegde, R.I.¹⁰ Gilmer, D.C.¹¹ Garcia, R.¹² Roan, D.¹³ Tseng, H.H.¹⁴ White, B.E.¹⁵ Tobin, P.J.¹⁶

18
- 33645471189
- 10.1109/LED.2005.859950
- X. P. Wang, M. F. Li, C. Ren, X. F. Yu, C. Shen, H. H. Ma, A. Chin, C. X. Zhu, J. Ning, M. B. Yu, and D. L. Kwong, IEEE Electron Device Lett. 27, 31 (2006). 10.1109/LED.2005.859950
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 31
- Wang, X.P.¹ Li, M.F.² Ren, C.³ Yu, X.F.⁴ Shen, C.⁵ Ma, H.H.⁶ Chin, A.⁷ Zhu, C.X.⁸ Ning, J.⁹ Yu, M.B.¹⁰ Kwong, D.L.¹¹

19
- 36249006521
- Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
- DOI 10.1109/TED.2007.907130
- X. P. Wang, A. E. Lim, H. Y. Yu, M. F. Li, C. Ren, W. P. Loh, C. Y. Zhu, A. Chin, A. D. Trigg, Y. C. Yeo, S. Biesemans, G. Q. Lo, and D. L. Kwong, IEEE Trans. Electron Devices 54, 2871 (2007). 10.1109/TED.2007.907130 (Pubitemid 350123871)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.11 , pp. 2871-2877
- Wang, X.P.¹ Lim, A.E.-J.² Yu, H.Y.³ Li, M.-F.⁴ Ren, C.⁵ Loh, W.-Y.⁶ Zhu, C.X.⁷ Chin, A.⁸ Trigg, A.D.⁹ Yeo, Y.-C.¹⁰ Biesemans, S.¹¹ Lo, G.-Q.¹² Kwong, D.-L.¹³

20
- 33748806836
- Effective work function modulation by controlled dielectric monolayer deposition
- DOI 10.1063/1.2349310
- L. Pantisano, T. Schram, B. O'Sullivan, T. Conard, S. DeGendt, G. Groesenenken, P. Zimmerman, A. Akheyar, M. M. Heyns, S. Shamuilla, V. V. Afanasev, and A. Stesmans, Appl. Phys. Lett. 89, 113505 (2006). 10.1063/1.2349310 (Pubitemid 44403797)
- (2006) Applied Physics Letters , vol.89 , Issue.11 , pp. 113505
- Pantisano, L.¹ Schram, T.² O'Sullivan, B.³ Conard, T.⁴ De Gendt, S.⁵ Groeseneken, G.⁶ Zimmerman, P.⁷ Akheyar, A.⁸ Heyns, M.M.⁹ Shamuilla, S.¹⁰ Afanas'ev, V.V.¹¹ Stesmans, A.¹²

21
- 35948958613
- 2/Si capacitors
- DOI 10.1143/JJAP.46.7251
- Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, Jpn. J. Appl. Phys. 46, 7251 (2007). 10.1143/JJAP.46.7251 (Pubitemid 350074885)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.11 , pp. 7251-7255
- Yamamoto, Y.¹ Kita, K.² Kyuno, K.³ Toriumi, A.⁴

22
- 41649101225
- Experimental evidence for the flatband voltage shift of high- k metal-oxide-semiconductor devices due to the dipole formation at the high- kSi O2 interface
- DOI 10.1063/1.2904650
- K. Iwamoto, Y. Kamimuta, A. Ogawa, Y. Watanabe, S. Migata, T. Nabatame, and A. Toriumi, Appl. Phys. Lett. 92, 132907 (2008). 10.1063/1.2904650 (Pubitemid 351483668)
- (2008) Applied Physics Letters , vol.92 , Issue.13 , pp. 132907
- Iwamoto, K.¹ Kamimuta, Y.² Ogawa, A.³ Watanabe, Y.⁴ Migita, S.⁵ Mizubayashi, W.⁶ Morita, Y.⁷ Takahashi, M.⁸ Ota, H.⁹ Nabatame, T.¹⁰ Toriumi, A.¹¹

23
- 42349106417
- Reaction of barium oxide threshold voltage tuning layers with Si O2 and Hf O2 Si O2 gate dielectrics
- DOI 10.1063/1.2912533
- M. Copel, Appl. Phys. Lett. 92. 152909 (2008). 10.1063/1.2912533 (Pubitemid 351555736)
- (2008) Applied Physics Letters , vol.92 , Issue.15 , pp. 152909
- Copel, M.¹

24
- 40549096055
- P. D. Kirsch, P. Sivasubramani, J. Huang, C. D. Young, M. A. Quevedo-Lopez, H. C. Wen, H. Alshareef, K. Choi, C. S. Park, B. H. Lee, and H. H. Tseng, Appl. Phys. Lett. 92, 092901 (2008);
- (2008) Appl. Phys. Lett. , vol.92 , pp. 092901
- Kirsch, P.D.¹ Sivasubramani, P.² Huang, J.³ Young, C.D.⁴ Quevedo-Lopez, M.A.⁵ Wen, H.C.⁶ Alshareef, H.⁷ Choi, K.⁸ Park, C.S.⁹ Lee, B.H.¹⁰ Tseng, H.H.¹¹

25
- 79959506149
- (IEEE, New York)
- P. Sivasubramani, VLSI Tech. Digest (IEEE, New York, 2007), p. 68.
- (2007) VLSI Tech. Digest , pp. 68
- Sivasubramani, P.¹

26
- 85111790420
- H. Jagannathan, V. Narayanan, and S. Brown, Electrochem. Soc. Trans. 16, 19 (2008).
- (2008) Electrochem. Soc. Trans. , vol.16 , pp. 19
- Jagannathan, H.¹ Narayanan, V.² Brown, S.³

27
- 64149125385
- 10.1063/1.3110968
- K. Kita and A. Toriumi, Appl. Phys. Lett. 94, 132902 (2009). 10.1063/1.3110968
- (2009) Appl. Phys. Lett. , vol.94 , pp. 132902
- Kita, K.¹ Toriumi, A.²

28
- 67349136023
- K. Shiraishi, Microelectron. Eng. 86, 1733 (2009);
- (2009) Microelectron. Eng. , vol.86 , pp. 1733
- Shiraishi, K.¹

29
- 55849132194
- N. Umezawa, K. Shiraishi, K. Kakushima, H. Iwai, K. Ohmori, K. Yamada, and T. Chikyow, ECS Trans. 13, 15 (2008).
- (2008) ECS Trans. , vol.13 , pp. 15
- Umezawa, N.¹ Shiraishi, K.² Kakushima, K.³ Iwai, H.⁴ Ohmori, K.⁵ Yamada, K.⁶ Chikyow, T.⁷

30
- 67650486360
- 10.1063/1.3173814
- L. Lin and J. Robertson, Appl. Phys. Lett. 95, 012906 (2009). 10.1063/1.3173814
- (2009) Appl. Phys. Lett. , vol.95 , pp. 012906
- Lin, L.¹ Robertson, J.²

31
- 35949012124
- M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, Phys. Rev. B 43, 7347 (1991);
- (1991) Phys. Rev. B , vol.43 , pp. 7347
- Peressi, M.¹ Baroni, S.² Resta, R.³ Baldereschi, A.⁴

32
- 0030263798
- A. Franciosi and C. G. van de Walle, Surf. Sci. Rep. 25, 1 (1996).
- (1996) Surf. Sci. Rep. , vol.25 , pp. 1
- Franciosi, A.¹ Van De Walle, C.G.²

33
- 33846377842
- O. Sharia, A. A. Demkov, G. Bersuker, and B. H. Lee, Phys. Rev. B 75, 035306 (2007);
- (2007) Phys. Rev. B , vol.75 , pp. 035306
- Sharia, O.¹ Demkov, A.A.² Bersuker, G.³ Lee, B.H.⁴

34
- 40949157023
- O. Sharia, A. A. Demkov, G. Bersuker, and B. H. Lee, ibid. 77, 085326 (2008).
- (2008) Phys. Rev. B , vol.77 , pp. 085326
- Sharia, O.¹ Demkov, A.A.² Bersuker, G.³ Lee, B.H.⁴

35
- 0037171005
- First-principles simulation: Ideas, illustrations and the CASTEP code
- DOI 10.1088/0953-8984/14/11/301, PII S0953898402328315
- M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard, P. J. Hasnip, S. J. Clark, and M. C. Payne, J. Phys. Condens. Mater. 14, 2717 (2002). 10.1088/0953-8984/14/11/301 (Pubitemid 34288361)
- (2002) Journal of Physics Condensed Matter , vol.14 , Issue.11 , pp. 2717-2744
- Segall, M.D.¹ Lindan, P.J.D.² Probert, M.J.³ Pickard, C.J.⁴ Hasnip, P.J.⁵ Clark, S.J.⁶ Payne, M.C.⁷

36
- 67650401839
- (Japanese Applied Physical Society, Tokyo)
- B. P. Linder, V. Narayanan, V. K. Paruchuri, E. Cartier, and S. Kanakasabapathy, Technical Digest Solid State Devices and Materials Conference (Japanese Applied Physical Society, Tokyo, 2007), p. 16.
- (2007) Technical Digest Solid State Devices and Materials Conference , pp. 16
- Linder, B.P.¹ Narayanan, V.² Paruchuri, V.K.³ Cartier, E.⁴ Kanakasabapathy, S.⁵

37
- 79959495326
- presented at MRS China (private communication)
- B. H. Lee, presented at MRS China (2008) (private communication).
- (2008)
- Lee, B.H.¹

38
- 79959523725
- (IEEE, New York)
- T. Takahasi, H. Minakata, Y. Morisaki, S. Xiao, M. Nakabayashi, K. Nishigaya, T. Sakoda, K. Ikeda, H. Morioka, N. Tamura, M. Kase, and Y. Nara, Tech. Digest IEDM (IEEE, New York, 2009), p. 17.2.
- (2009) Tech. Digest IEDM , pp. 172
- Takahasi, T.¹ Minakata, H.² Morisaki, Y.³ Xiao, S.⁴ Nakabayashi, M.⁵ Sakoda, K.N.T.⁶ Ikeda, K.⁷ Morioka, H.⁸ Tamura, N.⁹ Kase, M.¹⁰ Nara, Y.¹¹

39
- 0017556846
- Work function of the elements and its periodicity
- DOI 10.1063/1.323539
- H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977). 10.1063/1.323539 (Pubitemid 8557760)
- (1977) Journal of Applied Physics , vol.48 , Issue.11 , pp. 4729-4733
- Michaelson Herbert, B.¹

40
- 71949122204
- 10.1063/1.3263719
- B. E. Coss, W. -Y. Loh, R. M. Wallace, J. Kim, P. Majhi, and R. Jammy, Appl. Phys. Lett. 95, 222105 (2009). 10.1063/1.3263719
- (2009) Appl. Phys. Lett. , vol.95 , pp. 222105
- Coss, B.E.¹ Loh, W.-Y.² Wallace, R.M.³ Kim, J.⁴ Majhi, P.⁵ Jammy, R.⁶

41
- 0000886539
- 10.1103/PhysRevB.53.10942
- A. Pasquarello, M. S. Hybertsen, and R. Car, Phys. Rev. B 53, 16 10942 (1996). 10.1103/PhysRevB.53.10942
- (1996) Phys. Rev. B , vol.53 , Issue.16 , pp. 10942
- Pasquarello, A.¹ Hybertsen, M.S.² Car, R.³

42
- 0345376777
- 10.1063/1.1626019
- G. D. Wilk and D. A. Muller, Appl. Phys. Lett. 83, 3984 (2003). 10.1063/1.1626019
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3984
- Wilk, G.D.¹ Muller, D.A.²

43
- 4043069747
- 10.1063/1.1772855
- H. S. Baik, M. Kim, G. S. Park, S. A. Song, M. Varela, A. Franceschetti, S. T. Pantelides, and S. J. Pennycock, Appl. Phys. Lett. 85, 672 (2004). 10.1063/1.1772855
- (2004) Appl. Phys. Lett. , vol.85 , pp. 672
- Baik, H.S.¹ Kim, M.² Park, G.S.³ Song, S.A.⁴ Varela, M.⁵ Franceschetti, A.⁶ Pantelides, S.T.⁷ Pennycock, S.J.⁸

44
- 4043062793
- 10.1063/1.1773365
- M. Copel, M. C. Reuter, and P. Jamison, Appl. Phys. Lett. 85 458 (2004). 10.1063/1.1773365
- (2004) Appl. Phys. Lett. , vol.85 , pp. 458
- Copel, M.¹ Reuter, M.C.² Jamison, P.³

45
- 19944430988
- Interfacial layer-induced mobility degradation in high-k transistors
- DOI 10.1143/JJAP.43.7899, Dielectric Thin Films for Future ULSI Devices
- G. Bersuker, J. Barnett, N. Moumen, B. Foran, C. D. Young, P. Lysaght, J. Peterson, B. H. Lee, P. M. Zeitzoff, and H. R. Huff, Jpn. J. Appl. Phys. 43, 7899 (2004). 10.1143/JJAP.43.7899 (Pubitemid 40169162)
- (2004) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.43 , Issue.11 B , pp. 7899-7902
- Bersuker, G.¹ Barnett, J.² Moumen, N.³ Foran, B.⁴ Young, C.D.⁵ Lysaght, P.⁶ Peterson, J.⁷ Lee, B.H.⁸ Zeitzoff, P.M.⁹ Huff, H.R.¹⁰

46
- 77956578673
- 10.1063/1.3478446
- M. Bosman, Y. Zhang, C. K. Cheng, X. Li, X. Wu, K. L. Pey, C. T. Lin, Y. W. Chen, S. H. Hsu, and C. H. Hsu, Appl. Phys. Lett. 97, 103504 (2010). 10.1063/1.3478446
- (2010) Appl. Phys. Lett. , vol.97 , pp. 103504
- Bosman, M.¹ Zhang, Y.² Cheng, C.K.³ Li, X.⁴ Wu, X.⁵ Pey, K.L.⁶ Lin, C.T.⁷ Chen, Y.W.⁸ Hsu, S.H.⁹ Hsu, C.H.¹⁰

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.