Alternative dielectrics to silicon dioxide for memory and logic devices

Nature

Volumn 406, Issue 6799, 2000, Pages 1032-1038

  Kingon, Angus I ^a   Maria, Jon Paul ^a   Streiffer, S K ^b  

^a North Carolina State University   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIOXIDE;

ARTICLE; DEVICE; DIFFUSION; ELECTRONICS; LOGIC; MICROELECTRODE; PRIORITY JOURNAL; RESOURCE ALLOCATION; SEMICONDUCTOR; TECHNOLOGY;

EID: 0034739021     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/35023243     Document Type: Article

References (37)

1. Moore, G. E. Progress in digital integrated electronics, IEEE IEDM Tech. Dig. 11-13 (1975).
2. Moore G. E. Cramming more components onto integrated circuits, Electronics 38, 114-117 (1965).
3. Semiconductor Industry Association, International Technology Roadmap for Semiconductors 1999 edn 〈http://www.itrs.net/ntrs/publntrs.nsf〉.
4. Lo, S.-H., Buchanan, D. A., Taur, Y. & Wang, W. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs, IEEE Electron Device Lett. 18, 209-211 (1997).
5. Summerfelt, S. R. in Thin Film Ferroelectric Materials and Devices (ed. Ramesh, R.) 1-42 (Kluwer, Boston, MA, 1997).
6. Kotecki, D. E. A review of high dielectric materials for DRAM applications, Integr. Ferroelec. 16, 1-19 (1997).
7. 4 dielectrics for future stacked-capacitor DRAM, IBM J. Res. Develop. 43, 339-350 (1999).
8. Fazan, P. C. et al. Ultrathin oxide nitride dielectrics for rugged stacked DRAM capacitors, IEEE Electron Device Lett. 13, 86-88 (1992).
9. 4 ceramics. J. Phys. D29, 1321-1325 (1996).
10. Matsuhara, S., Sakuma, T., Yamamichi, S., Yamaguchi, H. & Miyasaka, Y. in Ferroelectric Thin Films (eds Kingon, A. I. and Myers, E. R.) (Digest 200) 243-253 (Materials Research Society, Pittsburgh, PA, 1990).
11. Fazan, P. Trends in the development of ULSI DRAM capacitors, Integr. Ferroelec. 4, 247-256 (1994).
12. 4 thin films grown by chemical vapor deposition, J. Appl. Phys. 82, 2497-2504 (1997).
13. 4, thin films grown by chemical vapor deposition, J. Appl. Phys. 86, 4565-4575 (1999).
14. Kingon, A. I., Streiffer, S. K., Basceri, C. & Summerfelt, S. R. Application of high-permittivity perovskite thin films to dynamic random access memories. Mater. Res. Bull. 21, 46-52 (1996).
15. 4 thin films from 1 mHz to 20 GHz. Appl. Phys. Lett. 72, 498-500 (1998).
16. 4 thin films. Jpn. J. Appl. Phys. 34, 5478-5482 (1995)
17. 3 thin film capacitors, Thesis, North Carolina State Univ. (1999).
18. 3 for I-Gbit DRAMs. Solid State Technol. 40, 235-242 (1997).
19. Buskirk, P. C. V. et al. Common and unique aspects of perovskite thin film CVD processes, Integr. Ferroelec. 21, 273-289 (1998).
20. 3 thin film capacitors for ultra-high density dynamic random access memories. Thesis, North Carolina State Univ. (1997).
21. 3 thin films compared to mechanisms found in titanate ceramics and single crystals, Integr. Ferroelec. 22, 603-614 (1998).
22. Wu, E. Y., Stathis, J. H. & Han, L.-K. Ultrathin oxide reliability for ULSI applications, Semiconductor Sci. Technol. 15, 425-435 (2000).
23. Muller, D.A. et al. The electronic structure at the atomic scale of ultrathin gate oxides. Nature 399, 758-762 (1999).
24. Hirose, M. et al. Fundamental limit of gate oxide thickness scaling in advanced MOSFETs. Semiconductor Sci. Technol. 15, 485-490 (2000).
25. ci.cq > 10, IEDM Tech. Digest Int. 141-144 (1999).
26. Alers, G. B. et al. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures. Appl. Phys. Lett. 73, 1517-1519 (1998)
27. 2 dielectrics. IEEE Trans. Electron Devices 44, 104-109 (1997).
28. Wilk, G. D., Wallace, R. M. & Anthony, J. M. Hafnium and zirconium silicates for advanced gate dielectrics. J. Appl. Phys. 87, 484-492 (2000).
29. Wilk, G. D. & Wallace, R. M. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon. Appl. Phys. Lett, 74, 2854-2856 (1999).
30. Cheng, Y. C. & Sullivan, E. A. Scattering of charge carriers in silicon. J. Appl. Phys. 44, 923-925 (1973).
31. 3 gate dielectric on Si. Appl. Phys. Lett. 76, 1324-1326 (2000).
32. Hubbard, K. J. & Schloni, D. G. Thermodynamic stability of binary oxides in contact with silicon. J. Mater. Res. 11, 2757-2776 (1996).
33. Copel, M., Gribelyuk, M. & Gusev, E. Structure and stability of ultrathin zirconium oxide layers on Si(001), Appl. Phys. Lett. 76, 436-438 (2000).
34. 3 films on Si. Appl. Phys. Lett. 76, 176-178 (2000).
35. Shannon R. D. Dielectric polarizabilities of ions in oxides and fluorides. J. Appl. Phys. 73, 348-366 (1993).
36. Schlom, D. G. High-K candidates for use as the gate dielectric in silicon MOSFETs. Appl. Phys. A (in the press).
37. Hergenrother, J. M. et al. The vertical replacement-gate (VRG) MOSFET a 50-nm vertical MOSFET with lithographically-independent gate length. IEDM Tech. Digest 75-78 (1999).