First-principles exploration of alternative gate dielectrics: Electronic structure of ZrO2/Si and ZrSiO4/Si interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 15, 2004, Pages

  Puthenkovilakam, Ragesh ^a   Carter, Emily A ^a   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON; ZIRCONIUM OXIDE;

ARTICLE; CHEMICAL STRUCTURE; CONDUCTANCE; DENSITY; DENSITY FUNCTIONAL THEORY; DIELECTRIC CONSTANT; ELECTRONICS; ELEMENTARY PARTICLE; SEMICONDUCTOR; SIMULATION;

EID: 42749100720     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.155329     Document Type: Article

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