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Volumn 93, Issue 24, 2008, Pages

Evidence of dangling bond electrical activity at the Ge/oxide interface

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; OXYGEN;

EID: 57849127979     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3050451     Document Type: Article
Times cited : (49)

References (23)
  • 1
    • 37249061772 scopus 로고    scopus 로고
    • 1369-7021 10.1016/S1369-7021(07)70350-4.
    • Y. Kamata, Mater. Today 1369-7021 10.1016/S1369-7021(07)70350-4 11, 30 (2008).
    • (2008) Mater. Today , vol.11 , pp. 30
    • Kamata, Y.1
  • 11
    • 35548961196 scopus 로고    scopus 로고
    • x Gate Dielectric Stacks, NATO Advanced Studies Institute, Series II: Mathematics, Physics and Chemistry Vol. (Plenum, New York), and references therein.
    • M. Fanciulli, O. Costa, S. Baldovino, S. Cocco, G. Seguini, E. Prati, and G. Scarel, Defects in High-x Gate Dielectric Stacks, NATO Advanced Studies Institute, Series II: Mathematics, Physics and Chemistry Vol. 220 (Plenum, New York, 2005), p. 26, and references therein.
    • (2005) Defects in High-x Gate Dielectric Stacks , vol.220 , pp. 26
    • Fanciulli, M.1    Costa, O.2    Baldovino, S.3    Cocco, S.4    Seguini, G.5    Prati, E.6    Scarel, G.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.