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Volumn 68, Issue 15, 1996, Pages 2076-2078

Passivation of Pb0 and Pb1 interface defects in thermal (100) Si/SiO2 with molecular hydrogen

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[No Author keywords available]

Indexed keywords


EID: 11544321991     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116308     Document Type: Article
Times cited : (134)

References (17)
  • 1
    • 30844431996 scopus 로고    scopus 로고
    • 2 defect physics, see the 13 articles in Semicond. Sci. Technol. 4, 961 (1989), and references therein
    • 2 defect physics, see the 13 articles in Semicond. Sci. Technol. 4, 961 (1989), and references therein.
  • 2
    • 0018518071 scopus 로고    scopus 로고
    • P. Caplan, E. Poindexter, B. Deal, and R. Razouk, J. Appl. Phys. 50, 5847 (1979); E. Poindexter and P. Caplan, Prog. Surf. Sci. 14, 211 (1983)
    • P. Caplan, E. Poindexter, B. Deal, and R. Razouk, J. Appl. Phys. 50, 5847 (1979); E. Poindexter and P. Caplan, Prog. Surf. Sci. 14, 211 (1983).
  • 7
    • 22244452118 scopus 로고    scopus 로고
    • See, e.g., E. Kooi, Phillips Res. Rep. 21, 477 (1966)
    • See, e.g., E. Kooi, Phillips Res. Rep. 21, 477 (1966).
  • 13
    • 0006014640 scopus 로고    scopus 로고
    • A Gaussian distribution in activation energies was used to describe the reactivation of H-passivated DX centers in AlGaAs by J. C. Nabity et al., Appl. Phys. Lett. 50, 921 (1987)
    • A Gaussian distribution in activation energies was used to describe the reactivation of H-passivated DX centers in AlGaAs by J. C. Nabity et al., Appl. Phys. Lett. 50, 921 (1987).
  • 15
    • 22244484521 scopus 로고    scopus 로고
    • 2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 271
    • 2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 271.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.