High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation

Applied Physics Letters

Volumn 81, Issue 16, 2002, Pages 2956-2958

  Guha, S ^a   Gusev, E P ^a   Okorn Schmidt, H ^a   Copel, M ^a   Ragnarsson, L A ^a   Bojarczuk, N A ^a   Ronsheim, P ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE STABILITY; METAL DIFFUSION; METAL GATE; MOBILITY DEGRADATION; SILICON OXYNITRIDES;

DEGRADATION; DIFFUSION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; SILICON; SILICON NITRIDE;

ALUMINUM;

EID: 79955998808     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513662     Document Type: Article

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