Metal electrode/high-κ dielectric gate-stack technology for power management

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 8-20

  Lee, Byoung Hun ^a   Song, Seung Chul ^a,b   Choi, Rino ^a,c   Kirsch, Paul ^a  

^a SEMATECH   (United States)

^b QUALCOMM INC   (United States)

^c Inha University   (South Korea)

Author keywords

Gate stack; Hafnium oxides; High dielectric; Metal electrode; Scaling

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRODES; GATE DIELECTRICS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS;

DIELECTRIC GATE-STACK TECHNOLOGY; EQUIVALENT OXIDE THICKNESS (EOT); GATE STACK; HAFNIUM OXIDES; METAL ELECTRODE; POWER MANAGEMENT;

ELECTRON DEVICES;

EID: 37749026017     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911044     Document Type: Article

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