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Journal of the Electrochemical Society

Volumn 158, Issue 8, 2011, Pages

Suppression of ALD-induced degradation of Ge MOS interface properties by low power plasma nitridation of GeO2

(5) Zhang, Rui a Iwasaki, Takashi a Taoka, Noriyuki a Takenaka, Mitsuru a Takagi, Shinichi a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; HIGH QUALITY; HIGH-K GATE DIELECTRICS; IN-SITU; INTERFACIAL LAYER; LOW POWER; METAL OXIDE SEMICONDUCTOR; MOS INTERFACE; NITROGEN CONCENTRATIONS; NITROGEN CONTENT; PLASMA NITRIDATION; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; DEGRADATION; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; METALLIC COMPOUNDS; MOS DEVICES; NITROGEN; NITROGEN PLASMA;

GERMANIUM OXIDES;

EID: 80051743257 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3599065 Document Type: Article

Times cited : (40)

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