Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer

Journal of Applied Physics

Volumn 96, Issue 6, 2004, Pages 3467-3472

  Kim, Hyoungsub ^a   McIntyre, Paul C ^a   Chui, Chi On ^a   Saraswat, Krishna C ^a   Stemmer, Susanne ^b  

^a Stanford University   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIONS; EQUIVALENT OXIDE THICKNESS (EOT); INTERFACIAL LAYERS (IL); SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);

CAPACITANCE; CHEMICAL BONDS; CURRENT DENSITY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRON DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; LEAKAGE CURRENTS; METALLIC FILMS; MOSFET DEVICES; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SOLUBILITY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACES (MATERIALS);

EID: 4944257396     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1776636     Document Type: Article

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