Ab initio modeling of structure and defects at the HfO2/Si interface

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 412-415

  Gavartin, J L ^a   Fonseca, L ^b   Bersuker, G ^c   Shluger, A L ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b Freescale Semiconductors Brasil ^*

^c SEMATECH   (United States)

Author keywords

Ab initio modelling; HfO2; Interface; Si; SiOx

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); DEFECTS; DEPOSITION; EPITAXIAL GROWTH; GROWTH (MATERIALS); INTERFACES (MATERIALS); MOSFET DEVICES; PROBABILITY DENSITY FUNCTION; SILICON;

AB INITIO MODELING; FILM GROWTH KINETICS; HFO2; SIOX;

HAFNIUM COMPOUNDS;

EID: 19944375819     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.097     Document Type: Conference Paper

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