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Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 1093-1096

Pseudopotential study of PrO2 and HfO2 in fluorite phase

(3) Dabrowski J a Zavodinsky, V a,b Fleszar, A c

a IHP (Germany)

b INSTITUTE OF AUTOMATION AND CONTROL PROCESSES (Russian Federation)

c UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; HAFNIUM COMPOUNDS; PRASEODYMIUM COMPOUNDS; SUBSTRATES; ULTRATHIN FILMS;

ULTRATHIN EPITAXIAL FILMS;

MOSFET DEVICES;

EID: 0035391117 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2714(01)00070-1 Document Type: Article

Times cited : (53)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.