Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films

Journal of Crystal Growth

Volumn 249, Issue 1-2, 2003, Pages 251-261

  Hausmann, Dennis M ^a   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

A3. Atomic layer epitaxy; A3. Metalorganic chemical vapor deposition; A3. Polycrystalline deposition; B1. Oxides

Indexed keywords

FILM GROWTH; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; THICK FILMS; THIN FILMS; X RAY DIFFRACTION; ZIRCONIA;

ATOMIC LAYER DEPOSITION (ALD);

EPITAXIAL GROWTH;

EID: 0037298039     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02133-4     Document Type: Conference Paper

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