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Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 244-249

Defects at Ge:GeO2 and Ge:MeOx interfaces

(2) Li, H a Robertson, J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

Calculation; Ge Ge:GeO2 interface; Passivation

Indexed keywords

BAND OFFSETS; GAP STATE; INDUCED GAP STATE; VALENCE ALTERNATION PAIRS;

CALCULATIONS; ELECTRONIC PROPERTIES; INTERFACE STATES; OXYGEN VACANCIES; PASSIVATION;

GERMANIUM;

EID: 84876745813 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2013.03.111 Document Type: Article

Times cited : (8)

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