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Volumn 79, Issue 19, 2009, Pages

Nontrigonal Ge dangling bond interface defect in condensation-grown (100) Si1-x Gex / SiO2

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Indexed keywords


EID: 65649137016     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.195301     Document Type: Article
Times cited : (27)

References (47)
  • 4
    • 51749095891 scopus 로고    scopus 로고
    • edited by A. Dimoulas, Gusev, McIntyre, and Heyns (Springer, Berlin
    • Advanced Gate Stacks for High-Mobility Semiconductors, edited by, A. Dimoulas, E., Gusev, P. C., McIntyre, and M., Heyns, (Springer, Berlin, 2007).
    • (2007) Advanced Gate Stacks for High-Mobility Semiconductors
  • 5
    • 44449095646 scopus 로고    scopus 로고
    • 10.1149/1.2919115
    • D. Brunco, J. Electrochem. Soc. 155, H552 (2008). 10.1149/1.2919115
    • (2008) J. Electrochem. Soc. , vol.155 , pp. 552
    • Brunco, D.1
  • 8
    • 26544473410 scopus 로고
    • 10.1103/PhysRevB.38.9657
    • K. Brower, Phys. Rev. B 38, 9657 (1988). 10.1103/PhysRevB.38.9657
    • (1988) Phys. Rev. B , vol.38 , pp. 9657
    • Brower, K.1
  • 9
    • 11544321991 scopus 로고    scopus 로고
    • 10.1063/1.116308;
    • A. Stesmans, Appl. Phys. Lett. 68, 2076 (1996) 10.1063/1.116308
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2076
    • Stesmans, A.1
  • 10
    • 0001291950 scopus 로고    scopus 로고
    • 10.1063/1.373684;
    • A. Stesmans, J. Appl. Phys. 88, 489 (2000) 10.1063/1.373684
    • (2000) J. Appl. Phys. , vol.88 , pp. 489
    • Stesmans, A.1
  • 11
    • 0036679246 scopus 로고    scopus 로고
    • 10.1063/1.1482427
    • A. Stesmans, J. Appl. Phys. 92, 1317 (2002). 10.1063/1.1482427
    • (2002) J. Appl. Phys. , vol.92 , pp. 1317
    • Stesmans, A.1
  • 16
    • 0001170732 scopus 로고
    • 10.1103/PhysRevB.48.2418
    • A. Stesmans, Phys. Rev. B 48, 2418 (1993). 10.1103/PhysRevB.48.2418
    • (1993) Phys. Rev. B , vol.48 , pp. 2418
    • Stesmans, A.1
  • 18
    • 0029273669 scopus 로고
    • 10.1016/0039-6028(94)00746-2
    • K. Prabhakaran and T. Ogino, Surf. Sci. 325, 263 (1995). 10.1016/0039-6028(94)00746-2
    • (1995) Surf. Sci. , vol.325 , pp. 263
    • Prabhakaran, K.1    Ogino, T.2
  • 31
    • 0001191838 scopus 로고
    • 10.1103/PhysRevB.45.9501
    • A. Stesmans, Phys. Rev. B 45, 9501 (1992). 10.1103/PhysRevB.45.9501
    • (1992) Phys. Rev. B , vol.45 , pp. 9501
    • Stesmans, A.1
  • 35
    • 0037817496 scopus 로고
    • This label is consistent with a previous proposal made for a consistent scheme of labeling occurring ESR-revealed point defects at semiconductor/ insulator interfaces, starting from historically first initiated labeling [10.1088/0268-1242/4/12/005
    • This label is consistent with a previous proposal made for a consistent scheme of labeling occurring ESR-revealed point defects at semiconductor/ insulator interfaces, starting from historically first initiated labeling [A. Stesmans, Semicond. Sci. Technol. 4, 1000 (1989) and Ref.], and in anticipation of potentially new emerging members as research advances. Depending on preference, one may prefer either the label GPb1 or GePb1 for the current center. 10.1088/0268-1242/4/12/005
    • (1989) Semicond. Sci. Technol. , vol.4 , pp. 1000
    • Stesmans, A.1
  • 36
    • 0346840948 scopus 로고
    • 10.1063/1.335931;
    • D. Griscom, J. Appl. Phys. 58, 2524 (1985) 10.1063/1.335931
    • (1985) J. Appl. Phys. , vol.58 , pp. 2524
    • Griscom, D.1
  • 37
    • 0000134320 scopus 로고
    • 10.1103/PhysRevB.48.17972
    • B. J. Mrstik and P. J. McMarr, Phys. Rev. B 48, 17972 (1993). 10.1103/PhysRevB.48.17972
    • (1993) Phys. Rev. B , vol.48 , pp. 17972
    • Mrstik, B.J.1    McMarr, P.J.2
  • 39
    • 0000206815 scopus 로고
    • See, e.g., edited by D. R. Uhlmann and N. J. Kreidl (Academic, New York
    • See, e.g., D. L. Griscom, in Glass: Science and Technology, edited by, D. R. Uhlmann, and, N. J. Kreidl, (Academic, New York, 1990), Vol. 4B, p. 151.
    • (1990) Glass: Science and Technology , vol.4 , pp. 151
    • Griscom, D.L.1
  • 45
    • 22944473686 scopus 로고    scopus 로고
    • 10.1063/1.1829047;
    • F. Neese, J. Chem. Phys. 122, 034107 (2005) 10.1063/1.1829047
    • (2005) J. Chem. Phys. , vol.122 , pp. 034107
    • Neese, F.1
  • 46
    • 0037170213 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.88.086403
    • C. J. Pickard and F. Mauri, Phys. Rev. Lett. 88, 086403 (2002). 10.1103/PhysRevLett.88.086403
    • (2002) Phys. Rev. Lett. , vol.88 , pp. 086403
    • Pickard, C.J.1    Mauri, F.2
  • 47
    • 0013259246 scopus 로고
    • See, e.g., A. G. Revesz and H. L. Hughes, in edited by J. P. Colinge, V. S. Lysenko, and A. N. Nasarov (Kluwer, Dordrecht
    • See, e.g., A. G. Revesz and H. L. Hughes, in Physical and Technical Problems of SOI Structures and Devices, edited by, J. P. Colinge, V. S. Lysenko, and, A. N. Nasarov, (Kluwer, Dordrecht, 1995), p. 133.
    • (1995) Physical and Technical Problems of SOI Structures and Devices , pp. 133


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