The valence band alignment at ultrathin SiO2/Si interfaces

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1606-1608

  Alay, J L ^a   Hirose, M ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009417325     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363895     Document Type: Article

References (15)

1. T. Yoshida, D. Imafuku, J. Alay, S. Miyazaki, and M. Hirose, Jpn. J. Appl. Phys. 34, 903 (1995).
2. P. V. Dressendorfer and R. C. Barker, Appl. Phys. Lett. 36, 933 (1980).
3. S. Horiguchi and H. Yoshino, J. Appl. Phys. 58, 1597 (1985).
4. S. Heike, Y. Wada, S. Kondo, M. Lutwyche, K. Murayama, and H. Kuroda, Extended Abstracts of the International Conference on Solid State Devices and Materials, Yokohama, 1994 (Business Center for Academic Societies Japan, Tokyo, 1994), p. 40.
5. L. A. Kasprzak, R. B. Laibowitz, and M. Ohring, J. Appl. Phys. 48, 4281 (1977).
6. H. C. Card, Solid State Commun. 14, 1011 (1974).
7. G. Lewicki and J. Maserjan, J. Appl. Phys. 46, 3032 (1975).
8. V. Kumar and W. E. Dahlke, Solid-State Electron. 20, 143 (1977).
9. F. J. Grunthaner and P. J. Grunthaner, Mater. Sci. Rep. 1, 147 (1986).
10. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, and J. A. Yarmoff, Phys. Rev. B 38, 6084 (1988).
11. N. Terada, T. Haga, N. Miyata, K. Moriki, M. Fujisawa, M. Morita, T. Ohmi, and T. Hattori, Phys. Rev. B 46, 2312 (1992).
12. J. L. Alay, M. Fukuda, C. H. Bjorkman, K. Nakagawa, S. Yokoyama, S. Sasaki, and M. Hirose, Jpn. J. Appl. Phys. 34B, 653 (1995).
13. S. Miyazaki, H. Nishimura, M. Fukuda, L. Ley, and J. Ristin, Appl. Surf. Sci. (to be published).
14. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969), Chap. 9.
15. T. Yamazaki, C. H. Bjorkman, S. Miyazaki, and M. Hirose, in Proceedings of the 22nd International Conference on The Physics of Semiconductors, 1994, Vol. 3, p. 2653.