SmScO3 thin films as an alternative gate dielectric

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Durgun Ozben E ^a   Lopes, J M J ^a   Roeckerath, M ^a   Lenk, St ^a   Hollander B ^a   Jia, Y ^b   Schlom, D G ^b   Schubert, J ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GATE DIELECTRICS; GATES (TRANSISTOR); OXIDE FILMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAMARIUM; SEMICONDUCTING SILICON COMPOUNDS; THICK FILMS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ALTERNATIVE GATE DIELECTRICS; C-V CURVES; DIELECTRIC CONSTANTS; EFFECTIVE OXIDE CHARGES; INTERFACE TRAP DENSITIES; LEAKAGE CURRENT MEASUREMENTS; LOW-LEAKAGE CURRENTS; RUTHERFORD BACK-SCATTERING SPECTROMETRIES; SCANDATE;

AMORPHOUS FILMS;

EID: 51849128695     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2968660     Document Type: Article

References (19)

1. X. Gou and T. P. Ma, IEEE Electron Device Lett. 0741-3106 10.1109/55.678546 19, 207 (1998).
2. D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, Nature (London) 0028-0836 10.1038/21602 399, 758 (1999).
3. M. T. Bohr, R. S. Chau, T. Ghani, and K. Mistry, IEEE Spectrum 0018-9235 10.1109/MSPEC.2007.4337663 44, 29 (2007).
4. K. Tomida, K. Kita, and A. Toriumi, Appl. Phys. Lett. 0003-6951 10.1063/1.2355471 89, 142902 (2006).
5. T. S. Böscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellán, U. Schröder, S. Kudelka, P. D. Kirsch, C. Krug, P. Y. Hung, S. C. Song, B. S. Ju, J. Price, G. Pant, B. E. Gnade, W. Krautschneider, B. -H. Lee, and R. Jammy, Proceedings of the IEDM, 2006 (unpublished).
6. S. Migita, Y. Watanabe, H. Ota, H. Ito, Y. Kamimuta, T. Nabatame, and A. Toriumi, Proceedings of the VLSI, 2008 (unpublished).
7. R. Essary, K. Ramani, V. Craciun, and R. K. Singh, Appl. Phys. Lett. 0003-6951 10.1063/1.2193046 88, 182902 (2006).
8. J. L. Roberts, P. A. Marshall, A. C. Jones, P. R. Chalker, J. F. Bickley, P. A. Williams, S. Taylor, L. M. Smith, G. W. Critchlow, M. Schumacher, and J. Lindner, J. Mater. Chem. 0959-9428 10.1039/b305665c 14, 391 (2004).
9. J. M. J. Lopes, M. Roeckerath, T. Heeg, U. Littmark, J. Schubert, S. Mantl, Y. Jia, and D. G. Schlom, Microelectron. Eng. 84, 1890 (2007).
10. M. Wagner, T. Heeg, J. Schubert, C. Zhao, O. Richard, M. Caymax, V. V. Afanas'ev, and S. Mantl, Solid-State Electron. 0038-1101 10.1016/j.sse.2005.10. 036 50, 58 (2006).
11. M. Wagner, T. Heeg, J. Schubert, St. Lenk, S. Mantl, C. Zhao, M. Caymax, and S. De Gendt, Appl. Phys. Lett. 0003-6951 10.1063/1.2198103 88, 172901 (2006).
12. H. M. Christen, G. E. Jellison, Jr., I. Ohkubo, S. Huang, M. E. Reeves, E. Cicerrella, J. L. Freeouf, Y. Jia, and D. G. Schlom, Appl. Phys. Lett. 0003-6951 10.1063/1.2213931 88, 262906 (2006).
13. C. Zhao, T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V. V. Afanas'ev, A. Stesmans, and D. G. Schlom, Appl. Phys. Lett. 0003-6951 10.1063/1.1886249 86, 132903 (2005).
14. E. H. Nicollian and J. R. Brews, MOS Technology (Wiley, New York, 1982).
15. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/0168-583X(88)90705-7 33, 891 (1988).
16. E. P. Gusev, C. Cabral, Jr., M. Copel, C. D'Emic, and M. Gribelyuk, Microelectron. Eng. 0167-9317 10.1016/S0167-9317(03)00291-0 69, 145 (2003).
17. J. Kim and K. Yong, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2003. 12.009 263, 442 (2004).
18. H. Bang and J. H. Cho, J. Korean Phys. Soc. 42, 316 (2003).
19. M. Tapajna, K. Husekova, D. Machajdk, A. P. Kobzev, T. Schram, R. Luptak, L. Harmatha, and K. Frohlich, Microelectron. Eng. 83, 2412 (2006).