Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1894-1896

  Kaczer, B ^a   Veloso, A ^a   Aoulaiche, M ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

High k dielectrics; nFET; Oxygen vacancies; Positive Bias Temperature Instability (PBTI)

Indexed keywords

GATE CURRENT; GATE STACKS; GATE VOLTAGES; HIGH-K DIELECTRICS; MULTIPLE GATES; N-CHANNEL; NFET; POSITIVE BIAS TEMPERATURE INSTABILITIES; POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI); POSITIVELY CHARGED; RARE EARTH METALS; THEORETICAL PREDICTION;

ELECTRIC INSULATORS; FIELD EFFECT TRANSISTORS; HAFNIUM; LANTHANUM; OXYGEN; PASSIVATION; RARE EARTHS; STABILITY;

OXYGEN VACANCIES;

EID: 67349274910     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.082     Document Type: Article

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