Dielectric functions and optical bandgaps of high- K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4500-4505

  Lim, Seung Gu ^a   Kriventsov, Stas ^a   Jackson, Thomas N ^a   Haeni, J H ^a   Schlom, D G ^a   Balbashov, A M ^b   Uecker, R ^c   Reiche, P ^c   Freeouf, J L ^d   Lucovsky, G ^e  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b MOSCOW POWER ENGINEERING INSTITUTE   (Russian Federation)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

^e NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO QUANTUM CHEMICAL CALCULATIONS; ALTERNATIVE DIELECTRICS; BULK CRYSTALLINE; CANDIDATE MATERIALS; DIELECTRIC FUNCTIONS; ENERGY SCHEMES; FAR ULTRAVIOLET; HIGH-K DIELECTRIC; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; OPTICAL BAND GAP ENERGY; OPTICAL METROLOGY; OPTICAL TRANSMISSION MEASUREMENTS; SILICON DEVICES; SILICON SUBSTRATES; SPECTROSCOPIC DATA; SPECTROSCOPIC ELLIPSOMETER SYSTEMS; VALENCE BAND OFFSETS;

CALCULATIONS; DIELECTRIC FILMS; ELECTRONIC STRUCTURE; HAFNIUM OXIDES; MOSFET DEVICES; OPTICAL BAND GAPS; OPTICAL PROPERTIES; QUANTUM CHEMISTRY; SPECTROSCOPIC ELLIPSOMETRY; ULTRAVIOLET SPECTROSCOPY;

GATE DIELECTRICS;

EID: 0036537434     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456246     Document Type: Article

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