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Volumn 106, Issue 2, 2009, Pages

Stabilization of very high- k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition

(12) Tsoutsou, D a Apostolopoulos, G b Galata, S F a Tsipas, P a Sotiropoulos, A a Mavrou, G a Panayiotatos, Y a Dimoulas, A a Lagoyannis, A c Karydas, A G c Kantarelou, V c Harissopoulos, S c

a INSTITUTE OF MATERIALS SCIENCE (Greece)

b INSTITUTE OF NUCLEAR TECHNOLOGY AND RADIATION PROTECTION (Greece)

c INSTITUTE OF NUCLEAR PHYSICS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC OXYGEN BEAM DEPOSITION; DIELECTRIC PERMITTIVITIES; DOPED SAMPLE; EQUIVALENT OXIDE THICKNESS; GE CONTENT; K-VALUES; LOW DEPOSITION TEMPERATURE; LOW GROWTH TEMPERATURE; MAXIMUM VALUES; SCALED DEVICES; STRUCTURAL DETAILS; TETRAGONAL DISTORTION; TETRAGONAL PHASE; TETRAGONAL ZIRCONIA; THERMAL STABILITY; X-RAY DIFFRACTION DATA;

ATOMS; CHEMICAL MODIFICATION; DEPOSITION; DOPING (ADDITIVES); OXIDE FILMS; OXYGEN; PERMITTIVITY; X RAY DIFFRACTION; ZIRCONIA; ZIRCONIUM ALLOYS;

GERMANIUM;

EID: 68249143053 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3182636 Document Type: Article

Times cited : (39)

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