Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics

IEEE Electron Device Letters

Volumn 24, Issue 2, 2003, Pages 87-89

  Kerber, A ^a,b,c   Cartier, E ^c,d   Pantisano, L ^c   Degraeve, R ^c   Kauerauf, T ^c   Kim, Y ^e   Hou, A ^e   Groeseneken, G ^c   Maes, H E ^c   Schwalke, U ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c IMEC   (Belgium)

^d IBM RESEARCH   (United States)

^e SEMATECH   (United States)

Author keywords

Charge trapping; HfO2

Indexed keywords

DIELECTRIC MATERIALS; FERMI LEVEL; HAFNIUM COMPOUNDS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

GATE DIELECTRICS;

GATES (TRANSISTOR);

EID: 0037718399     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.808844     Document Type: Article

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