Contributions to the effective work function of platinum on hafnium dioxide

Applied Physics Letters

Volumn 85, Issue 10, 2004, Pages 1826-1828

  Schaeffer, J K ^a   Fonseca, L R C ^a   Samavedam, S B ^a   Liang, Y ^a   Tobin, P J ^a   White, B E ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREE OF PINNING; INTERFACIAL VACANCIES; METAL INDUCED GAP STATES (MIGS); WORK FUNCTIONS;

ANNEALING; CAPACITORS; CHEMICAL BONDS; DIELECTRIC MATERIALS; DIFFUSION; ELECTRODES; FERMI LEVEL; HAFNIUM COMPOUNDS; SILICON;

PLATINUM;

EID: 4944238315     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1786656     Document Type: Article

References (15)

1. J. K. Schaeffer, S. B. Samavedam, D. C. Gilmer, V. Dhandapani, P. J. Tobin, J. Mogab, B-Y. Nguyen, B. E. White, Jr., S. Dakshina-Murthy, R. S. Rai, Z-X. Jiang, R. Martin, M. V. Raymond, M. Zavala, L. B. La, J. A. Smith, R. Garcia, D. Roan, M. Kottke, and R. B. Gregory, J. Vac. Sci. Technol. A 1, 21 (2003).
2. I. De, D. Johri, A. Srivastava, and C. M. Osbum, Solid-State Electron. 44, 1077 (1997).
3. C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hedge, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White, and P. Tobin, 2003 Sympoium on VLSI Tech. Digest, 2003.
4. Y. C. Yeo, P. Ranade, T-J. King, and C. Hu, IEEE Electron Device Lett. 23, 342 (2002).
5. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
6. W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and I. Lindau, J. Vac. Sci. Technol. 16, 1422 (1979).
7. H. Hasegawa and H. Ohno, J. Vac. Sci. Technol. B 4, 1130 (1986).
8. J. L. Freeouf and J. M. Woodall, Appl. Phys. Lett. 39, 727 (1981).
9. J. J. Hauser and K. Ahmed, Characterization and Metrology for ULSI Technology (AIP, New York, 1998).
10. R. Schmiedl, V. Demuth, P. Lahnor, H. Godehardt, Y. Bodschwinna, C. Harder, L. Hammer, H.-P. Strunk, M. Schulz, and K. Heinz., Appl. Phys. A: Mater. Sci. Process. 62, 223 (1996).
11. F. Fillot, B. Chenevier, S. Maitrejean, M. Audier, P. Chaudouet, B. Bochu, J. P. Senateur, A. Pisch, T. Mourier, H. Monchoix, B. Guillaumot, and G. Passemard, Microelectron. Eng. 70, 384 (2003).
12. V. I. Fillipov, A. A. Terentjev, and S. S. Yakimov, Sens. Actuators B 41, 153 (1997).
13. B. Flietner, T. Doll, J. Lechner, M. Leu, I. Eisele, Sens. Actuators B 22, 109 (1994).
14. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
15. L. R. C. Fonseca and Y. Liang, (private communications).