Initial growth of interfacial oxide during deposition of HfO 2 on silicon

Applied Physics Letters

Volumn 85, Issue 2, 2004, Pages 215-217

  Choi, K ^a   Temkin, H ^a   Harris, H ^b   Gangopadhyay, S ^b   Xie, L ^c   White, M ^c  

^a TEXAS TECH UNIVERSITY   (United States)

^b UNIVERSITY OF MISSOURI   (United States)

^c LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM EVAPORATION; HYDROGEN TERMINATION; INTERFACIAL LAYERS;

CATALYSIS; CHEMICAL BONDS; ELECTRON BEAMS; ETCHING; EVAPORATION; HYDROGEN; SILICON; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 3242880931     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771457     Document Type: Article

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