Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1571-1576

  Toriumi, Akira ^a,b   Tabata, Toshiyuki ^a,b   Hyun Lee, Choong ^a   Nishimura, Tomonori ^a,b   Kita, Koji ^a,b   Nagashio, Kosuke ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

CMOS; Ge; High k; Mobility; Pinning

Indexed keywords

CMOS; GE; HIGH-K; MOBILITY; PINNING;

DESORPTION; FERMIONS; LOGIC GATES; MESFET DEVICES; MOSFET DEVICES;

GERMANIUM;

EID: 67349222362     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.052     Document Type: Article

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