Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Walsh, S ^a   Fang, L ^a   Schaeffer, J K ^b   Weisbrod, E ^b   Brillson, L J ^a,c  

^a OHIO STATE UNIVERSITY   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SILICA; SILICON; SPECTROSCOPIC ANALYSIS; ULTRATHIN FILMS;

CHARGE STATES; GATE OXIDE HETEROSTRUCTURES; HOLE CENTERS; INTERFACE DEFECT;

HETEROJUNCTIONS;

EID: 33846983891     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435585     Document Type: Article

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