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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 1, 2013, Pages

Interface layer in hafnia/Si films as a function of ALD cycles

(4) Mani Gonzalez, Pierre Giovanni a Vazquez Lepe, Milton Oswaldo a Espinosa Magaña, Francisco b Herrera Gomez, Alberto a

a DEPARTAMENTO DE FÍSICA (Mexico)

b CENTRO DE INVESTIGACIÓN EN MATERIALES AVANZADOS (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; ENERGY DIFFERENCES; EXPECTED VALUES; HAFNIUM SILICATES; INTERFACE LAYER; STOICHIOMETRIC COEFFICIENTS; TETRAKIS; TWO-COMPONENT;

ATOMIC LAYER DEPOSITION; BINDING ENERGY; HAFNIUM; INTERFACES (MATERIALS); OXYGEN; PHOTOELECTRONS; SILICATES; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM OXIDES;

EID: 84871887849 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.4747324 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.