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Volumn 97, Issue 22, 2010, Pages

Ultrathin GeOx Ny interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

(10) Xie, Qi a Musschoot, Jan a Schaekers, Marc b Caymax, Matty b Delabie, Annelies b Qu, Xin Ping c Jiang, Yu Long c Van Den Berghe, Sven d Liu, Junhu d Detavernier, Christophe a

a GHENT UNIVERSITY (Belgium)

b IMEC (Belgium)

c FUDAN UNIVERSITY (China)

d BELGIAN NUCLEAR RESEARCH CENTRE (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DIELECTRIC BREAKDOWNS; ELECTRICAL PROPERTY; EQUIVALENT OXIDE THICKNESS; GATE LEAKAGE CURRENT DENSITY; GATE STACKS; HIGH QUALITY; IN-SITU; METAL OXIDE SEMICONDUCTOR; N-TYPE GE; PLASMA PRE-TREATMENT; PLASMA SURFACES; PLASMA TREATMENT; ULTRA-THIN;

DIELECTRIC DEVICES; ELECTRIC FIELDS; GERMANIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

ELECTRIC PROPERTIES;

EID: 78650650758 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3524208 Document Type: Article

Times cited : (27)

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