The role of nitrogen-related defects in high- k dielectric oxides: Density-functional studies

Journal of Applied Physics

Volumn 97, Issue 5, 2005, Pages

  Gavartin, J L ^a   Shluger, A L ^a   Foster, A S ^b   Bersuker, G I ^c  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b AALTO UNIVERSITY   (Finland)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE ACCUMULATION; INTRINSIC DEFECTS; NATIVE DEFECTS; POSTDEPOSITION ANNEAL (PDA);

ANNEALING; CRYSTAL DEFECTS; ELECTRON TRAPS; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; NITROGEN; PROBABILITY DENSITY FUNCTION; SILICA;

DIELECTRIC MATERIALS;

EID: 20644443509     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1854210     Document Type: Article

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