Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Schaeffer, J K ^a   Capasso, C ^a   Gregory, R ^a   Gilmer, D ^a   Fonseca, L R C ^a   Raymond, M ^a   Happ, C ^a   Kottke, M ^a   Samavedam, S B ^a   Tobin, P J ^a   White Jr , B E ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODES; HFO2; INTERFACE CHEMISTRY; METAL ELECTRONEGATIVITY;

COMPOSITION; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LATTICE VIBRATIONS; SURFACE CHEMISTRY; TANTALUM COMPOUNDS;

ELECTROCHEMICAL ELECTRODES;

EID: 33846274955     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2395649     Document Type: Article

References (39)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. A. I. Kingon, J.-P. Maria, and S. K. Streiffer, Nature (London) 406, 1032 (2000).
3. I. De, D. Johri, A. Srivastava, and C. M. Osburn, Solid-State Electron. 44, 1077 (2000).
4. B. Cheng, B. Maiti, S. Samavedam, J. Grant, B. Taylor, P. Tobin, and J. Mogab, 2001 IEEE International SOI Conference. Proceedings (Cat. No. 01CH37207), p. 91-2 (2001).
5. C. Hobbs et al., Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No. 03CH37407), p. 9-10 (2003).
6. Y. C. Yeo, P. Ranade, T-J. King, and C. Hu, IEEE Electron Device Lett. 23, 342 (2002).
7. S. B. Samavedam et al., IEEE International Electron Devices Meeting 2003, p. 13.1.1-4 (2003).
8. V. Heine, Phys. Rev. 138, A1689 (1965).
9. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
10. W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and I. Lindau, J. Vac. Sci. Technol. 16, 1422 (1979).
11. H. Hasegawa and H. Ohno, J. Vac. Sci. Technol. B 4, 1130 (1986).
12. J. L. Freeouf, and J. M. Woodall, Appl. Phys. Lett. 39, 727 (1981).
13. W. Monch, Electronic Properties of Semiconductor Interfaces (Springer-Verlag, New York, 2004).
14. R. T. Tung, Mater. Sci. Eng., R. 35, 1 (2001).
15. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
16. J. K. Schaeffer, L. R. C. Fonseca, S. B. Samavedam, Y. Liang, P. J. Tobin, and B. E. White, Appl. Phys. Lett. 85, 1826 (2004).
17. E. Cartier et al., 2005 Symposium on VLSI Technology (IEEE Cat. No. 05CH37642), p. 230-1 (2005).
18. M. Copel, R. P. Pezzi, D. Neumayer, and P. Jamison, Appl. Phys. Lett. 88, 162902 (2006).
19. A. A. Knizhnik, I. M. Iskandarova, A. A. Bagatur'yants, B. V. Potapkin, and L. R. C. Fonseca, J. Appl. Phys. 97, 064911 (2005).
20. H. Y. Yu et al., IEEE Electron Device Lett. 25, 5 (2004).
21. R. Smoluchowski, Phys. Rev. 60, 661 (1941).
22. E. R. Engbrecht, Y.-M. Sun, S. Smith, K. Pfiefer, J. Bennett, J. M. White, and J. G. Ekerdt, Thin Solid Films 418, 150 (2002).
23. H. Pierson, Handbook of Refractory Carbides and Nitrides (Noyes, 1996).
24. T. Ya. Kosolapova, Handbook of High Temperature Compounds: Properties, Production, Applications (Hemisphere, New York, 1990).
25. J. K. Schaeffer et al., Tech. Dig. - Int. Electron Devices Meet. 2004, 287.
26. G. A. Brown, G. Smith, J. Saulters, K. Matthews, H.-C. Wen, P. Majhi, and B. H. Lee, Discussed at the 2005 IEEE SISC, Washington, DC, (unpublished).
27. M. V. Raymond (private communication).
28. Reference spectra for various phases of pure carbon films obtained from A. Miller, Zettlemoyer Center for Surface Studies, Sinclair Laboratory, Lehigh University, Bethlehem, PA.
29. R. Jha, J. Gurganos, Y. H. Kim, R. Choi, J. Lee, and V. Misra, IEEE Electron Device Lett. 25, 420 (2004).
30. S. Kurtin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 22, 1433 (1969).
31. H. B. Michaelson, IBM J. Res. Dev. 22, 72 (1978).
32. W. Gordy and W. J. O. Thomas, Phys. Rev. 24, 439 (1956).
33. S. G. Louie, J. R. Chelikowsky, M. L. Cohen, J. Vac. Sci. Technol. 13, 790 (1976).
34. M. Schluter, J. Vac. Sci. Technol. 15, 1374 (1978).
35. R. Ishii, K. Matsumura, A. Sakai, and T. Sakata, Appl. Surf. Sci. 169-170, 658 (2001).
36. C. Stampfl and A. J. Freeman, Phys. Rev. B 71, 024111 (2005).
37. P. Villars, A. Prince, H. Okamoto, Handbook of Ternary Alloy Phase Diagrams (ASM Metals Park, Ott, 1994).
38. T. B. Massalski, Binary Alloy Phase Diagrams, 2nd ed. (ASM, Metals Park, Ott, 1996).
39. Disorder and Order in Strongly Nonstoichiometric Compounds: Transition Metal Carbides, Nitrides, and Oxides, Springer Series in Materials Science (Springer, Berlin, 2001).