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Applied Physics Letters

Volumn 97, Issue 8, 2010, Pages

High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure

(4) Ko, Changhyun a Shandalov, Michael b McIntyre, Paul C b Ramanathan, Shriram a

a HARVARD UNIVERSITY (United States)

b Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONDUCTION; ELECTROCHEMICAL MEASUREMENTS; ELECTRONIC CONDUCTION; HAFNIUM OXIDE THIN FILMS; HIGH TEMPERATURE; INTERSTITIALS; NANO SCALE; NANOCRYSTALLINES; OXYGEN PARTIAL PRESSURE; P-TYPE; VARYING TEMPERATURE;

DEFECTS; HAFNIUM; HAFNIUM OXIDES; OXIDE FILMS; OXYGEN; PARTIAL PRESSURE; POINT DEFECTS; POSITIVE IONS; SINGLE CRYSTALS;

OXYGEN VACANCIES;

EID: 77956213417 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3482940 Document Type: Article

Times cited : (11)

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