Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

Applied Physics Letters

Volumn 77, Issue 12, 2000, Pages 1885-1887

  Houssa, M ^a,b   Afanas'ev, V V ^b   Stesmans, A ^b   Heyns, M M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001498374     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1310635     Document Type: Article

References (14)

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