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Applied Physics A: Materials Science and Processing

Volumn 90, Issue 3, 2008, Pages 577-579

Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition

(10) Schubert, J a Trithaveesak, O a Zander, W a Roeckerath, M a Heeg, T a Chen, H Y a Jia, C L a Meuffels, P a Jia, Y b Schlom, D G b

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; LANTHANUM COMPOUNDS; PERMITTIVITY; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

METAL-INSULATOR-METAL CAPACITOR; OXIDE THIN FILMS;

OXIDE FILMS;

EID: 37549044714 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-007-4327-8 Document Type: Article

Times cited : (26)

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