Ge dangling bonds at the (100) Ge/ GeO2 interface and the viscoelastic properties of GeO2

Applied Physics Letters

Volumn 93, Issue 16, 2008, Pages

  Houssa, M ^a,b   Pourtois, G ^a   Caymax, M ^a   Meuris, M ^a   Heyns, M M ^a,c   Afanas'Ev, V V ^b   Stesmans, A ^b  

^a IMEC   (Belgium)

^b KU LEUVEN   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRIC CURRENTS; ELECTROSLAG REMELTING; GERMANIUM; SILICON; SPIN DYNAMICS;

BAND GAPS; DEFECT LEVELS; DETECTION LIMITS; ELECTRON SPIN RESONANCES; ELECTRONIC ENERGIES; VISCOELASTIC PROPERTIES;

DANGLING BONDS;

EID: 54949120181     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3006320     Document Type: Article

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