Characteristics of atomic-layer-deposited thin Hfx Zr1-x O2 gate dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 845-852

  Triyoso, D H ^a   Hegde, R I ^a   Schaeffer, J K ^a   Gregory, R ^a   Wang, X D ^a   Canonico, M ^a   Roan, D ^a   Hebert, E A ^a   Kim, K ^a   Jiang, J ^a   Rai, R ^a   Kaushik, V ^a   Samavedam, S B ^a   Rochat, N ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; CHARACTERIZATION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM COMPOUNDS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIUM;

FILM MICROSTRUCTURE; GRAIN-SIZE DISTRIBUTION; NITROGEN AMBIENT ENVIRONMENT;

GATE DIELECTRICS;

EID: 34249904900     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2734978     Document Type: Article

References (41)

1. H.-H. Tseng, 2004 International Electron Devices Meeting (IEEE, Piscataway, NJ, 2005), p. 821.
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
3. H.-H. Tseng, 2005 IEEE VLSI-TSA International Symposium on VLSI Technology (IEEE, Piscataway, NJ, 2005), p. 132.
4. S. J. Rhee, C. S. Kang, C. H. Choi, C. Y. Kang, S. Krishnan, M. Zhang, M. S. Akbar, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2004, 837.
5. S. J. Rhee, Symposium on VLSI Technology: Digest of Technical Papers (IEEE, Piscataway, NJ, 2005), p. 168.
6. D. H. Triyoso, J. Appl. Phys. 98, 054104 (2005).
7. D. H. Triyoso, R. I. Hegde, X.-D. Wang, M. W. Stoker, R. Rai, M. E. Ramon, B. E. White Jr., and P. J. Tobin, J. Electrochem. Soc. 153, G834 (2006).
8. S. Gopalan, K. Onishi, K. Nieh, C. S. Kang, R. Choi, H.-J. Cho, S. Krishnan, and J. C. Lee, Appl. Phys. Lett. 80, 4416 (2002).
9. S. Van Elshocht, J. Electrochem. Soc. 152, F185 (2005).
10. M. Houssa, C. Bizzari, and J. M. Autran, Appl. Phys. Lett. 83, 5065 (2003).
11. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 233106 (2002).
12. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 075105 (2002).
13. R. I. Hegde, 2005 International Electron Devices Meeting (IEEE, Piscataway, NJ, 2005), p. 4.
14. D. H. Triyoso, Appl. Phys. Lett. 88, 222901 (2006).
15. D. H. Triyoso, P. J. Tobin, B. E. White, Jr., R. Gregory, and X. D. Wang, Appl. Phys. Lett. 89, 132903 (2006).
16. C. S. Cook, T. Daly, R. Liu, M. Canonico, Q. Xie, R. B. Gregory, and S. Zollner, Thin Solid Films 455-456, 794 (2004).
17. D. Bhattacharyya, N. K. Sahoo, S. Thakur, and N. C. Das, Vacuum 60, 419 (2001).
18. J. B. Theeten, D. E. Aspnes, F. Simondet, M. Erman, and P. C. Mura, J. Appl. Phys. 52, 6788 (1981).
19. G. E. Jellison, Jr., V. I. Merkulov, A. A. Puretzky, D. B. Geohegan, G. Eres, D. H. Lowndes, and J. B. Caughman, Thin Solid Films 377-378, 68 (2000).
20. D. E. Aspnes and A. A. Studna, Solid State Commun. 11, 1375 (1972).
21. S. Zollner, C. M. Herzinger, J. A. Woollam, S. S. Iyer, A. P. Powell, and K. Eberl, Solid State Commun. 96, 305 (1995).
22. P. Etchegoin, J. Kircher, M. Cardona, and C. Grein, Phys. Rev. B 45, 11721 (1992).
23. H. G. Tompkins, T. Zhu, and E. Chen, J. Vac. Sci. Technol. A 16, 1297 (1998).
24. H. G. Tompkins, Surf. Interface Anal. 29, 179 (2000).
25. Y. J. Cho, N. V. Nguyen, C. A. Richter, and J. R. Ehrstein, Appl. Phys. Lett. 80, 1249 (2001).
26. G. Lucovsky, Microelectron. Eng. 80, 110 (2005).
27. H. Takeuchi, D. Ha, and T. King, J. Vac. Sci. Technol. A 22, 1337 (2004).
28. Z. Song, B. R. Rogers, and N. D. Theodore, J. Vac. Sci. Technol. A 22, 711 (2004).
29. D. Franta and I. Ohlidal, Surf. Interface Anal. 30, 574 (2000).
30. R. A. Synowicki and T. E. Tiwald, Thin Solid Films 455-456, 248 (2004).
31. R. H. French, S. J. Glass, F. S. Ohuchi, Y. N. Xu, and W. Y. Ching, Phys. Rev. B 49, 5133 (1994).
32. G. E. Jellison, Jr. and F. A. Modine, Appl. Phys. Lett. 69, 371 (1996).
33. N. Rochat, A. Chabli, F. Bertin, M. Olivier, C. Vergnaud, and P. Mur, J. Appl. Phys. 91, 5029 (2002).
34. G. Stefanic and S. Music, Croat. Chem. Acta 75, 727 (2002).
35. I. P. Studenyak, M. Kranjcec, O. T. Nahusko, and O. M. Borets, Thin Solid Films 476, 137 (2005).
36. H.-H. Tseng, 2003 International Electron Devices Meeting (IEEE, Piscataway, NJ, 2003), p. 132.
37. K. Kukli, J. Appl. Phys. 96, 5298 (2004).
38. X. Liu, J. Electrochem. Soc. 152, G213 (2005).
39. D. H. Triyoso, J. Electrochem. Soc. 151, F220 (2004).
40. D. H. Triyoso, M. V. Raymond, and J. Gallegos III, Second International Symposium of Advanced Gate Stack Technology (unpublished), p. 45.
41. J. K. Schaeffer, S. B. Samavedam, M. Raymond, D. Gilmer, and C. Capasso (unpublished).