Optical properties of epitaxial SrHf O3 thin films grown on Si

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Sousa, M ^a   Rossel, C ^a   Marchiori, C ^a   Siegwart, H ^a   Caimi, D ^a   Locquet, J P ^a,d   Webb, D J ^a   Germann, R ^a   Fompeyrine, J ^a   Babich, K ^b   Seo, J W ^c,d   Dieker, Ch ^c  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c EPFL   (Switzerland)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MOS DEVICES; PERMITTIVITY; PEROVSKITE; SPECTROSCOPIC ELLIPSOMETRY; X RAY DIFFRACTION ANALYSIS;

GATE OXIDES; HIGH-PERMITTIVITY MATERIALS;

THIN FILMS;

EID: 36649029963     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2812425     Document Type: Article

References (30)

1. Both IBM and Intel announced in January 2007 the use of a high-k gate oxide layer for their 45 nm node transistors, cf. http://www.semiconductor- today.com/news_items/NEWS_2007/JAN_07/INTEL_300107.htm
2. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).
3. R. McKee, F. Walker, and M. Chisholm, Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics, MRS Proceedings No. 567 (Materials Research Society, Pittsburgh, 1999), p. 415; R. McKee, F. Walker, and M. Chisholm, Science 293, 468 (2001).
4. R. McKee, F. Walker, and M. Chisholm, Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics, MRS Proceedings No. 567 (Materials Research Society, Pittsburgh, 1999), p. 415; R. McKee, F. Walker, and M. Chisholm, Science 293, 468 (2001).
5. Z. Yu., J. Ramdani, J. A. Curless, C. D. Overgaard, J. M. Finder, R. Droopad, K. W. Eisenbeiser, J. A. Hallmark, W. J. Ooms, and V. S. Kaushi, J. Vac. Sci. Technol. B 18, 2139 (2000).
6. K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw, and C. D. Overgaard, Appl. Phys. Lett. 76, 1324 (2000).
7. G. J. Norga, A. Guiller, C. Marchiori, J.-P. Locquet, H. Siegwart, D. Halley, C. Rossel, D. Caimi, J. W. Seo, and J. Fompeyrine, Fundamentals of Novel Oxide/Semiconductor Interface, MRS Proceedings No. 786 (Materials Research Society, Pittsburgh, 2004), p. 219.
8. G. J. Norga, C. Marchiori, A. Guiller, J.-P. Locquet, C. Rossel, H. Siegwart, D. Caimi, and J. Fompeyrine, Appl. Phys. Lett. 87, 262905 (2006).
9. C. Rossel, B. Mereu, C. Marchiori, D. Caimi, M. Sousa, A. Guiller, H. Siegwart, R. Germann, J.-P. Locquet, J. Fompeyrine, and D. J. Webb, Appl. Phys. Lett. 89, 053506 (2006).
10. See http://www.jawoollam.com/vuvvase.html for more details.
11. PDFMAINT 9, 0, 133, 4.
12. H. Swanson and R. K. Fuyat, " Standard X-ray Diffraction Powder Patterns., " Natl. Bur. Stand. Circ. (U. S.) No. 539 (U.S. GPO, Washington, D.C., 1954), Vol. 3, p. 44.
13. P. Narchuk, M. Kovba, and V. Levitskii, Dokl. Phys. Chem. 256, 11 (1981).
14. V. Red'ko, A. Shevchenko, and L. Lopato, Inorg. Mater. 24, 1739 (1988).
15. F. S. Aguirre-Tostado, A. Herrera-Gomez, J. C. Woicik, R. Droopad, Z. Yu, D. G. Schlom, J. Karapetrova, P. Zschack, and P. Pianetta, J. Vac. Sci. Technol. A 22, 1356 (2004).
16. C. Marchiori, M. Sousa, A. Guiller, G. Norga, H. Siegwart, J. W. Seo, J. P. Locquet, and J. Fompeyrine, Appl. Phys. Lett. 88, 072913 (2006).
17. I. McCarthy, M. P. Agustin, S. Shamuilia, S. Stemmer, V. V. Afanas'ev, and S. A. Campbell, Thin Solid Films 515, 2527 (2006).
18. S. Zollner, A. A. Demkov, R. Liu, P. L. Fejes, R. B. Gregory, P. Alluri, J. A. Curless, Z. Yu, J. Ramdani, R. Droopad, T. E. Tiwald, J. N. Hilfiker, and J. A. Woollam, J. Vac. Sci. Technol. B 18, 2242 (2000).
19. F. Gervais, in Handbook of Optical Constants, edited by, E. D. Palik, (Academic, Boston, 1991), Vol. 2, p. 1035.
20. G. E. Jellison, L. A. Boatner, D. H. Lowndes, R. A. McKee, and M. Godbole, Appl. Opt. 33, 6053 (1994).
21. M. Woehlecke, V. Marello, and A. Onton, J. Appl. Phys. 48, 1748 (1977).
22. B. D. Johs, J. A. Woollam, C. M. Herzinger, J. N. Hilfiker, R. A. Synowicki, and C. L. Bungay, Proc. SPIE CR72, 29 (1999).
23. M. Capizzi and A. Frova, Phys. Rev. Lett. 25, 1298 (1970).
24. K. W. Blazey, Phys. Rev. Lett. 27, 146 (1971).
25. S. Adachi, Optical Properties of Crystalline and Amorphous Semiconductors (Kluwer Academic, Boston, 1999), p. 194.
26. G. Fabricius, E. L. Peltzer y Blanca, C. O. Rodriguez, A. P. Ayala, P. de la Presa, and A. Lopez Garcia, Phys. Rev. B 55, 164 (1997).
27. Y. X. Wang, C. L. Wang, and W. L. Zhong, J. Phys. Chem. B 109, 12909 (2005).
28. R. O. Jones and O. Gunnarsson, Rev. Mod. Phys. 61, 689 (1989).
29. E. Mete, R. Shaltaf, and S. Ellialtioglu, Phys. Rev. B 68, 035119 (2003).
30. Y. S. Lee, J. S. Lee, T. W. Noh, D. Y. Byun, K. S. Yoo, K. Yamaura, and E. Takayama-Muromachi, Phys. Rev. B 67, 113101 (2003).