Band offsets of wide-band-gap oxides and implications for future electronic devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1785-1791

  Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ENERGY GAP; FERROELECTRIC MATERIALS; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; STRONTIUM COMPOUNDS; TANTALUM COMPOUNDS; ZIRCONIA;

SCHOTTKY BARRIERS; WIDE-BAND-GAP OXIDES;

SEMICONDUCTOR MATERIALS;

EID: 0034187380     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591472     Document Type: Article

References (85)

1. E. H. Rhoderick and R. H. Williams, Metal Semiconductor Contacts (Oxford University, Oxford, 1988).
2. W. Mönch, Surf. Sci. 300, 928 (1994).
3. J Tersoff, Surf. Sci. 168, 275 (1986).
4. L. J. Brillson, Surf. Sci. 300, 909 (1994).
5. W. E. Spicer, T. Kendelewicz, N. Newman, K. K. Chin, and I. Lindau, Suff. Sci. 168, 240 (1986).
6. R. E. Allen, O. F. Sankey, and J. D. Dow, Surf. Sci. 168, 376 (1986).
7. A. D. Katnani and G. Margaritondo, Phys. Rev. B 28, 1944 (1983).
8. E. T. Yu, J. O. McCaldin, and T. C. McGill, Solid State Phys. 46, 1 (1992).
9. K. W. Kwon, C. S. Kang, S. O. Park, H. K. Kang, and S. T. Ahn, IEEE Trans. Electron Devices 43, 919 (1996).
10. R. A. B. Devine, L. Vallier, J. L. Autran, P. Paillet, and J. L. Leray, Appl. Phys. Lett. 68, 1775 (1996).
11. Y. Matsui et al., IEEE Electron Device Lett. 17, 431 (1996).
12. G. B. Alers, R. M. Fleming, Y. H. Wong, B. Dennis, A. Pinczuk, G. Redinbo, R. Urdahl, E. Ong, and Z. Hasan, Appl. Phys. Lett. 72, 1308 (1998).
13. S. Ezhilvalavan and T. Y. Tseng, J. Appl. Phys. 83, 4797 (1998).
14. D. Park, Y. King, T. J. King, C. Hu, A. Kalnitsky, S. P. Tay, and C. C. Cheng, IEEE Electron Device Lett. 19, 441 (1998).
15. R. Roy and I. C. Kizilyalli, Appl. Phys. Lett. 72, 2835 (1998).
16. A. Chatterjee et al., IEDM Tech. Digest, 777 (1998).
17. G. W. Dietz, W. Antpohler, M. Klee, and R. Waser, J. Appl. Phys. 78, 6113 (1995).
18. G. W. Dietz, M. Schumacher, R. Waser, S. K. Streiffer, C. Basceri, and A. I. Kingon, J. Appl. Phys. 82, 2359 (1997).
19. D. E. Kotecki, Integr. Ferroelectr. 16, 1 (1997).
20. C. Sudhama, A. C. Campbell, P. D. Maniar, R. E. Jones, and C. J. Mogab, J. Appl. Phys. 75, 1014 (1994).
21. C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) 374, 627 (1995).
22. J. F. Scott, Annu. Rev. Mater. Sci. 28, 79 (1998).
23. G. Lucovsky, H. Y. Yang, Y. Wu, and H. Niimi, IEEE Electron Device Lett, (in press).
24. P. Zurcher et al., Mater. Res. Soc. Symp. Proc. 541, 11 (1999).
25. A. Grill et al., Mater. Res. Soc. Symp. Proc. 541, 89 (1999).
26. H. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
27. A. W. Cowley and S. M. Sze, J. Appl. Phys. 36, 3212 (1965).
28. V. Heine, Phys. Rev. 138A, 1689 (1965).
29. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
30. J. Tersoff, Phys. Rev. Lett. 56, 2755 (1986).
31. J. Tersoff, Phys. Rev. B 30, 4874 (1984).
32. J. Tersoff, Phys. Rev. B 32, 6968 (1985).
33. J. Tersoff and W. A. Harrison, Phys. Rev. Lett. 58, 2367 (1987).
34. S. Kurtin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 30, 1433 (1969).
35. S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, Phys. Rev. B 15, 2154 (1977).
36. M. Schluter, Phys. Rev. B 17, 5044 (1978); Thin Solid Films 93, 3 (1982).
37. M. Schluter, Phys. Rev. B 17, 5044 (1978); Thin Solid Films 93, 3 (1982).
38. W. Gordy and W. J. O. Thomas, Phys. Rev. 24, 439 (1956).
39. H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977).
40. W. Mönch, Phys. Rev. Lett. 58, 1260 (1986).
41. W. Mönch, Appl. Surf. Sci. 92, 367 (1996).
42. W. Mönch, Europhys. Lett. 27, 479 (1994).
43. M. Aoki and H. Kawarada, Jpn. J. Appl. Phys., Part 2 33, L708 (1994).
44. W. Jacob, E. Bertel, and V. Dose, Europhys. Lett. 4, 1303 (1987).
45. J. Robertson and C. W. Chen, Appl. Phys. Lett. 74, 1168 (1999).
46. R. C. Neville and C. A. Mead, J. Appl. Phys. 43, 4657 (1972).
47. R. H. Williams, A. McKinley, G. J. Hughes, V. Montgomery, and I. T. McGovern, J. Vac. Sci. Technol. 21, 594 (1982).
48. M. Cardona and N. E. Christensen, Phys. Rev. B 35, 6182 (1987).
49. W. Mönch, J. Appl. Phys. 80, 5076 (1996).
50. C. A. Mead and W. G. Spitzer, Phys. Rev. 134A, 713 (1964).
51. R. L. Andersen, Solid-State Electron. 5, 341 (1962).
52. W. A. Harrison, J. Vac. Sci. Technol. 14, 1016 (1977).
53. J. O. McCaldin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 36, 56 (1976).
54. J. Robertson, W. L. Warren, B. A. Tuttle, D. Dimos, and D. M. Smyth, Appl. Phys. Lett. 63, 1519 (1993).
55. J. Robertson, C. W. Chen, W. L. Warren, and C. D. Gutleben, Appl. Phys. Lett. 69, 1704 (1996).
56. J. Robertson, C. W. Chen, and W. L. Warren, Mater. Res. Soc. Symp. Proc. 493, 249 (1998).
57. J. Robertson, E. Raissi, J. P. Maria, and A. I. Kingon, Mater. Res. Soc. Symp. Proc. 592 (1999).
58. W. A. Harrison, Electronic Structure (Freeman, San Francisco, 1979).
59. L. F. Mattheis, Phys. Rev. B 6, 4718 (1972).
60. R. D. King-Smith and D. Vanderbilt, Phys. Rev. B 49, 5828 (1994).
61. G. S. Oehrlein, J. Appl. Phys. 55, 3715 (1984).
62. C. H. Seager (private communication).
63. A. J. Hartmann, R. M. Lamb, J. F. Scott, P. N. Johnston, M. El Bouanani, C. W. Chen, and J. Robertson, J. Korean Phys. Soc. 32, S1329 (1998).
64. J. F. Scott, Ferroelectr. Rev. 1, 1 (1998).
65. R. H. French, J. Am. Ceram. Soc. 73, 477 (1990).
66. R. H. French, S. J. Glass, F. S. Ohuchi, Y. N. Xu, and W. Y. Ching, Phys. Rev. B 49, 5133 (1994).
67. J. Pascual, J. Camassel, and H. Mathieu, Phys. Rev. B 18, 5606 (1978).
68. E. D. Palik, Handbook of Optical Properties of Solids (Academic, New York, 1985), Vols. 1-3.
69. G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. S. Urdahl, Appl. Phys. Lett. 73, 1517 (1998).
70. H. Hasegawa and T. Nishino, J. Appl. Phys. 69, 1501 (1991).
71. K. Abe and S. Komatsu, Jpn. J. Appl. Phys., Part 1 31, 2985 (1992).
72. T. Shimizu, N. Gotoh, N. Shinozaki, and H. Okushi, Appl. Surf. Sci. 117, 400 (1997).
73. M. Copel, P. R. Buncombe, D. A. Neumayer, T. M. Shaw, and R. M. Tromp, Appl. Phys. Lett. 70, 3227 (1997).
74. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).
75. S. K. Dey, J. J. Lee, and P. Alluri, Jpn. J. Appl. Phys., Part 1 34, 3134 (1995).
76. D. J. Wouters, G. J. Willems, and H. E. Maes, Microelectron. Eng. 29, 249 (1995).
77. C. D. Gutleben, Appl. Phys. Lett. 71, 3444 (1997).
78. L. Manchanda et al. Tech. Dig. IEDM, 605 (1998).
79. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
80. H. S. Kim, D. C. Gilmer, S. A. Campbell, and D. L. Polla, Appl. Phys. Lett. 69, 3860 (1996).
81. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
82. G. D. Wilk, R. M. Wallace, and J. M. Antony, J. Appl. Phys. 87, 484 (2000).
83. G. Lucovsky (private communication).
84. J. W. Keister, J. E. Rowe, J. J. Kolodziej, H. Niiki, T. E. Madey, and G. Lucovsky, J. Vac. Sci. Technol. B 17, 1831 (1999).
85. K. Eisenberger et al., Appl. Phys. Lett. 76, 1324 (2000).