On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Schaeffer, J K ^a   Gilmer, D C ^a   Samavedam, S ^a   Raymond, M ^a   Haggag, A ^a   Kalpat, S ^a   Steimle, B ^a   Capasso, C ^a   White Jr , B E ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; ELECTRODES; GATE DIELECTRICS; HAFNIUM COMPOUNDS; MOSFET DEVICES; SILICA;

EQUIVALENT OXIDE THICKNESS; HIGH-PERMITTIVITY GATE DIELECTRICS; METAL GATE ELECTRODES; SUBSTRATE DOPING;

THRESHOLD VOLTAGE;

EID: 35348904424     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2781551     Document Type: Article

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