Energy band alignment at the (100)Ge/HfO2 interface

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2319-2321

  Afanas'ev, V V ^a   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC INSULATORS; GERMANIUM; GROWTH (MATERIALS); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES; OXIDATION; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PHOTOEMISSION; SEMICONDUCTOR INSULATOR BOUNDARIES;

CONDUCTION BANDS; GATE DIELECTRICS; INTERNAL PHOTOEMISSION (IPE); POST DEPOSITION ANNEALING (PDA);

BAND STRUCTURE;

EID: 2142758723     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1688453     Document Type: Article

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