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Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 341-349

Ultrathin high-K metal oxides on silicon: Processing, characterization and integration issues

(7) Gusev, E P a Cartier, E a Buchanan, D A a Gribelyuk, M b Copel, M a Okorn Schmidt, H a D'Emic, C a

a IBM T J WATSON RESEARCH CENTER (United States)

b IBM (United States)

Author keywords

Al2O3; HfO2; High k gate dielectrics; Y2O3; ZrO2

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); PERMITTIVITY; SILICA;

METAL OXIDES;

ULTRATHIN FILMS;

EID: 0035498635 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(01)00667-0 Document Type: Conference Paper

Times cited : (370)

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