Bonding, Energies, and Band Offsets of Si-ZrO2 and HfO 2 Gate Oxide Interfaces

Physical Review Letters

Volumn 92, Issue 5, 2004, Pages 576011-576014

  Peacock, P W ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CARRIER MOBILITY; CHEMICAL BONDS; ELECTRONS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MONOLAYERS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

BAND OFFSETS; GATE OXIDE INTERFACES;

TRANSISTORS;

EID: 1642330111     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (29)

1. G. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001); A. I. Kingon, J. P. Maria, and S. K. Streiffer, Nature (London) 406, 1032 (2000).
2. G. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001); A. I. Kingon, J. P. Maria, and S. K. Streiffer, Nature (London) 406, 1032 (2000).
3. H. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
4. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
5. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
6. S. Guha, N. A. Bojarczuk, and V. Narayanam, Appl. Phys. Lett. 80, 766 (2002).
7. M. R. Visokay, J.J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002).
8. E. P. Gusev et al., Tech. Dig. Int. Electron Devices Meet. 20.1 (2001).
9. L. A. Ragnarsson, S. Guha, M. Copel, E. Cartier, N. A. Bojarczuk, and J. Karasinski, Appl. Phys. Lett 78, 4169 (2001).
10. Y. Tu and J. Tersoff, Phys. Rev. Lett. 84, 4393 (2000).
11. S. J. Wang et al., Appl. Phys. Lett. 78, 1604 (2001).
12. S. J. Wang and C. K. Ong, Appl. Phys. Lett. 80, 2541 (2002).
13. T. Ami et al., Appl. Phys. Lett. 78, 1361 (2001).
14. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).
15. X. Zhang, A. A. Demkov, H. Li, X. Hu, and J. Kulik, Phys. Rev. B 68, 125323 (2003); P.W. Peacock and J. Robertson, Appl. Phys. Lett. 83, 5497 (2003).
16. X. Zhang, A. A. Demkov, H. Li, X. Hu, and J. Kulik, Phys. Rev. B 68, 125323 (2003); P.W. Peacock and J. Robertson, Appl. Phys. Lett. 83, 5497 (2003).
17. C. J. Forst, C. Ashman, K. Schwarz, and P. E. Blochl, Nature (London) 427, 53 (2004).
18. D. Cherns, C. J. D. Hetherington, and C. J. Humphreys, Philos. Mag. A 49, 165 (1984).
19. D. R. Hamann, Phys. Rev. Lett 60, 313 (1988).
20. R. M. Tromp and M. C. Reuter, Phys. Rev. Lett 61, 1756 (1988).
21. S. Satpathy and R. M. Martin, Phys. Rev. B 39, 8494 (1989).
22. V. Milman, B. Winkler, J. A. White, C. J. Pickard, and M. C. Payne, Int. J. Quantum Chem 77, 895 (2000).
23. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
24. V. Fiorentini and G. Gulleri, Phys. Rev. Lett 89, 266101 (2002).
25. P.W. Peacock and J. Robertson, J. Appl. Phys. 92, 4712 (2002).
26. S. Miyazaki, J. Vac. Sci. Technol. B 19, 2212 (2001).
27. S. Sayan, E. Garfunkel, and S. Suzer, Appl. Phys. Lett. 80, 2135 (2002).
28. P.W. Peacock and J. Robertson, Mater. Res. Soc. Symp. Proc. 747, 99 (2002).
29. J. L. Alay and M. Hirose, J. Appl. Phys. 81, 1606 (1997).