Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

Applied Physics Letters

Volumn 82, Issue 1, 2003, Pages 106-108

  Kim, Hyoungsub ^a   McIntyre, Paul C ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRON DIFFRACTION; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION (ALD);

ULTRATHIN FILMS;

EID: 0037421383     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1533117     Document Type: Article

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